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参数资料
| 型号： | 2SA1123S |
| 厂商： | PANASONIC CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 50 mA, 150 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封装： | ROHS COMPLIANT, TO-92-B1, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 234K |
| 代理商： | 2SA1123S |
Transistors
1
Publication date: March 2003
SJC00011BED
2SA1123
Silicon PNP epitaxial planar type
For low-frequency high breakdown voltage amplification
Complementary to 2SC2631
■ Features
Satisfactory forward current transfer ratio h
FE collector current IC
characteristics.
High collector-emitter voltage (Base open) V
CEO
Small collector output capacitance (Common base, input open cir-
cuited) Cob
Makes up a complementary pair with 2SC2631, which is optimum
for the pre-driver stage of a 20 W to 40 W output amplifier.
■ Absolute Maximum Ratings T
a
= 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
150
V
Collector-emitter voltage (Base open)
VCEO
150
V
Emitter-base voltage (Collector open)
VEBO
5V
Collector current
IC
50
mA
Peak collector current
ICP
100
mA
Collector power dissipation
PC
750
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage (Base open)
VCEO
IC = 100 A, IB = 0
150
V
Emitter-base voltage (Collector open)
VEBO
IE = 10 A, IC = 0
5V
Collector-base cutoff current (Emitter open)
ICBO
VCB
= 100 V, I
E
= 0
1
A
Forward current transfer ratio *
hFE
VCE = 5 V, IC = 10 mA
130
450
Collector-emitter saturation voltage
VCE(sat)
IC = 30 mA, IB = 3 mA
1V
Transition frequency
fT
VCB
= 10 V, I
E
= 10 mA, f = 200 MHz
200
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
5
pF
(Common base, input open circuited)
Noise voltage
NV
VCE = 40 V, IC = 1 mA, GV = 80 dB
150
300
mV
Rg = 100 k, Function = FLAT
■ Electrical Characteristics T
a = 25°C ± 3°C
Unit: mm
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
5.0±0.2
0.7±0.1
0.45
+0.15
–0.1
2.5
+0.6
–0.2
0.45
+0.15
–0.1
2.5
12 3
+0.6
–0.2
4.0±0.2
5.1
±
0.2
12.9
±
0.5
2.3
±
0.2
0.7
±
0.2
1: Emitter
2: Collector
3: Base
TO-92-B1 Package
Rank
R
S
T
hFE
130 to 220
185 to 330
260 to 450
This product complies with the RoHS Directive (EU 2002/95/EC).
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SA1123T | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 150V V(BR)CEO | 50MA I(C) | TO-92 |
| 2SA1124 | 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:Silicon NPN epitaxial planer type(For low-frequency high breakdown voltage amplification) |
| 2SA11240R | 功能描述:TRANS PNP 150VCEO 50MA TO-92L RoHS:否 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)（最大）:1A 电压 - 集电极发射极击穿（最大）:30V Ib、Ic条件下的Vce饱和度（最大）:200mV @ 100mA，1A 电流 - 集电极截止（最大）:100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR |
| 2SA1124R | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 150V V(BR)CEO | 50MA I(C) | TO-92VAR |
| 2SA1124S | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 150V V(BR)CEO | 50MA I(C) | TO-92VAR |
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