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参数资料
| 型号： | 2SA1150-O |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 800 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | 2-4E1A, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 163K |
| 代理商： | 2SA1150-O |
2SA1150
2007-11-01
1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1150
Low Frequency Amplifier Applications
High hFE: hFE = 100~320
Complementary to 2SC2710.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
35
V
Collector-emitter voltage
VCEO
30
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
800
mA
Base current
IB
160
mA
Collector power dissipation
PC
300
mW
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 30 V, IE = 0
0.1
μA
Emitter cut-off current
IEBO
VEB = 5 V, IC = 0
0.1
μA
Collector-emitter breakdown voltage
V (BR) CEO
IC = 10 mA, IB = 0
30
V
hFE (1)
(Note)
VCE = 1 V, IC = 100 mA
100
320
DC current gain
hFE (2)
VCE = 1 V, IC = 700 mA
35
Collector-emitter saturation voltage
VCE (sat)
IC = 500 mA, IB = 20 mA
0.7
V
Base-emitter voltage
VBE
VCE = 1 V, IC = 10 mA
0.5
0.8
V
Transition frequency
fT
VCE = 5 V, IC = 10 mA
120
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
19
pF
Note: hFE (1) classification O: 100~200, Y: 160~320
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-4E1A
Weight: 0.13 g (typ.)
相关PDF资料 |
PDF描述 |
|---|---|
| 2SA1160-C | 2000 mA, 10 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SA1160C | 2000 mA, 10 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SA1160B | 2000 mA, 10 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SA1160A | 2000 mA, 10 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SA1162-O | 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SA1150-O(F) | 制造商:Toshiba America Electronic Components 功能描述:Trans GP BJT PNP 30V 0.8A 3-Pin Mini |
| 2SA1150Y | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 800MA I(C) | SPAK |
| 2SA1150-Y(F) | 制造商:Toshiba America Electronic Components 功能描述:Tr.,PNP,30V/800mA,hfe=160to320,MINI |
| 2SA1151 | 制造商:Distributed By MCM 功能描述:SUB ONLY NEC TRANSISTOR TO-92-60V -.1A .25W ECB |
| 2SA1152 | 制造商:n/a 功能描述:2SA1152 TO92 N9H1D NOTES |
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