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参数资料
| 型号： | 2SA1179 |
| 厂商： | RECTRON LTD |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | PLASTIC PACKAGE-3 |
| 文件页数： | 1/2页 |
| 文件大小： | 290K |
| 代理商： | 2SA1179 |
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
FEATURES
*
High breakdown voltage
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: UL 94V-O rate flame retardant
* Lead: MIL-STD-202E method 208C guaranteed
* Mounting position: Any
* Weight: 0.008 gram
* Marking: M
SOT-23
2SA1179
2006-3
ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted )
MAXIMUM RATINGS ( @ TA = 25oC unless otherwise noted )
CHARACTERISTICS
SYMBOL
UNITS
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
SYMBOL
VCBO
VCEO
V(BR)CBO
ICBO
IEBO
VALUE
MAX.
-
TYP.
-55
-50
-5
-0.1
400
-0.5
-1.0
200
180
4
MIN.
UNITS
V
-55
-50
-5
SOT-23 BIPOLAR TRANSISTORS
TRANSISTOR(PNP)
Dimensions in inches and (millimeters)
0.118(3.00)
0.012(0.30)
0.020(0.50)
0.003(0.08)
0.006(0.15)
0.110(2.80)
0.019(2.00)
0.071(1.80)
0.100(2.55)
0.089(2.25)
0.020(0.50)
0.012(0.30)
0.043(1.10)
0.035(0.90)
0.004(0.10)
0.000(0.00)
1
3
BASE
EMITTER
COLLECTOR
2
1
3
2
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
0.047(1.20)
0.055(1.40)
IC
TJ,Tstg
-150
200
-55-125
m
A
m
w
oC
Collector Current-Continuous
Total Device Dissipation
Junction and Storage Temperature
PD
Collector-base breakdowm voltage (IC= -10mA, IE= 0)
Collector-emitter breakdowm voltage (IC= -1mA, IB= 0)
Emitter-base breakdowm voltage (IE= -10mA, IC= 0)
Collector cut-off current (VCB= -35V, IE= 0)
Emitter cut-off current (VEB= -4V, IC= 0)
DC current gain (VCE= -6V, IC= -1mA)
Collector-emitter saturation voltage (IC= -50mA, IB= -5mA)
Base-emitter saturation voltage (IC= -50mA, IB= -5mA)
Transition frequency
Collector output capacitance (VCB= -6V, IE= 0, f=1MHZ)
V(BR)CEO
V(BR)EBO
hFE
VCE(sat)
VBE(sat)
fT
Cob
V
u
A
u
A
MHZ
p
F
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
CHARACTERISTICS
(VCE= -6V, IC= -10mA)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SA1179_0712 | 制造商:BILIN 制造商全称:Galaxy Semi-Conductor Holdings Limited 功能描述:Silicon Epitaxial Planar Transistor |
| 2SA1179_08 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:Low-Frequency General-Purpose Amplifier Applications |
| 2SA1179-4 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 150MA I(C) | SOT-23 |
| 2SA1179-5 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 150MA I(C) | SOT-23 |
| 2SA1179-6 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 150MA I(C) | SOT-23 |
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