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参数资料
| 型号： | 2SA1179N |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | CPA, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 35K |
| 代理商： | 2SA1179N |
2SA1179N / 2SC2812N
No.7198-1/4
Features
Miniature package facilitates miniaturization in end products.
High breakdown voltage.
Specifications ( ) : 2SA1179N
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
(--)55
V
Collector-to-Emitter Voltage
VCEO
(--)50
V
Emitter-to-Base Voltage
VEBO
(--)5
V
Collector Current
IC
(--)150
mA
Collector Current (Pulse)
ICP
(--)300
mA
Base Current
IB
(--)30
mA
Collector Dissipation
PC
200
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=(--)35V, IE=0A
(--)0.1
A
Emitter Cutoff Current
IEBO
VEB=(--)4V, IC=0A
(--)0.1
A
DC Current Gain
hFE
VCE=(--)6V, IC=(--)1mA
200
400
Gain-Bandwidth Product
fT
2SC2812N : VCE=6V, IC=1mA
100
MHz
2SA1179N : VCE=--6V, IC=--10mA
(180)
MHz
Output Capacitance
Cob
VCB=(--)6V, f=1MHz
(4.0)3.0
pF
Collector-to-Emitter Saturation Voltage
VCE(sat)
IC=(--)50mA, IB=(--)5mA
(--0.15)0.1
(--)0.5
V
Base-to-Emitter Saturation Voltage
VBE(sat)
IC=(--)50mA, IB=(--)5mA
(--)1.0
V
Collector-to-Base Breakdown Voltage
V(BR)CBO
IC=(--)10A, IE=0A
(--)55
V
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
IC=(--)1mA, RBE=∞
(--)50
V
Emitter-to-Base Breakdown Voltage
V(BR)EBO
IE=(--)10A, IC=0A
(--)5
V
Marking : 2SA1179N : M / 2SC2812N : L
* : The 2SA1179N / 2SC2812N are classified by 1mA hFE as follws:
Rank
6
hFE
200 to 400
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : EN7198A
92006 MS IM TC-00000143,00000144 / 72602 TS IM TA-2636, 2637
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
SANYO Semiconductors
DATA SHEET
2SA1179N / 2SC2812N
PNP / NPN Epitaxial Planar Silicon Transistors
Low-Frequency General-Purpose
Amp Applications
相关PDF资料 |
PDF描述 |
|---|---|
| 2SC2812N | 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SA1188 | 100 mA, 90 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SA1189-D | SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SA1189-D | SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SA1188-E | SMALL SIGNAL TRANSISTOR, TO-92 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SA1179N_06 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:Low-Frequency General-Purpose Amp Applications |
| 2SA1179N_12 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:Low-Frequency General-Purpose Amp Applications |
| 2SA1179N6 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:BJT |
| 2SA1179N6-CPA-TB-E | 功能描述:开关晶体管 - 偏压电阻器 BIP PNP 0.15A 50V RoHS:否 制造商:ON Semiconductor 配置: 晶体管极性:NPN/PNP 典型输入电阻器: 典型电阻器比率: 安装风格:SMD/SMT 封装 / 箱体: 直流集电极/Base Gain hfe Min:200 mA 最大工作频率: 集电极—发射极最大电压 VCEO:50 V 集电极连续电流:150 mA 峰值直流集电极电流: 功率耗散:200 mW 最大工作温度: 封装:Reel |
| 2SA1179N6-TB-E | 功能描述:两极晶体管 - BJT BIP PNP 0.15A 50V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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