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参数资料
| 型号： | 2SA1201Y |
| 厂商： | UNISONIC TECHNOLOGIES CO LTD |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 800 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | SOT-89, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 98K |
| 代理商： | 2SA1201Y |
UTC2SA1201
PNP EPITAXIAL SILICON TRANSISTOR
UTC UNISONIC TECHNOLOGIES CO. LTD
1
QW-R208-024,A
SILICON PNP EPITAXIAL
TRANSISTOR
DESCRIPTION
The UTC 2SA1201 is designed for power amplifier and
voltage amplifier applications.
FEATURES
*High voltage: VCEO= -120V
*High transition frequency: fT=120MHz(typ.)
*Pc=1 to 2 W(mounted on ceramic substrate)
SOT-89
1
1:EMITTER 2:COLLECTOR 3:BASE
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
-120
V
Collector-Emitter Voltage
VCEO
-120
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current
Ic
-800
mA
Base Current
IB
-160
mA
PC
500
mW
Collector Power Dissipation
PC*
1000
mW
Junction Temperature
Tj
150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
* : Mounted on cermic substrate( 250mm2 × 0.8t )
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Collector to emitter breakdown
voltage
V(BR)CEO
Ic= -10mA, IB=0
-120
V
Emitter to Base breakdown voltage
V(BR)EBO
IE= -1mA, IC=0
-5
V
Collector cut-off current
ICBO
VCB= -120V, IE=0
-0.1
A
Emitter cut-off current
IEBO
VEB= -5V, IC=0
-0.1
A
DC Current Gain
hFE
VCE= -5V, IC= -100mA
80
240
Collector to emitter saturation
voltage
VCE(sat)
Ic= -500mA, IB= -50mA
-1.0
V
Base to emitter voltage
VBE
VCE= -5V, IC= -100mA
-1.0
V
Transition frequency
fT
VCE= -5V, Ic= -100mA
120
MHz
Collector output capacitance
Cob
VCB= -10V, IE=0, f=1MHz
30
pF
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