参数资料
型号: 2SA1242(2-7B1A)
元件分类: 小信号晶体管
英文描述: 5000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封装: LEAD FREE, 2-7B1A, 3 PIN
文件页数: 3/4页
文件大小: 149K
代理商: 2SA1242(2-7B1A)
2SA1242
2004-07-07
3
Coll
ect
or
cur
re
nt
I
C
(A
)
C
ollect
or
c
urre
nt
I C
(
A
)
Collector-emitter voltage VCE (V)
IC – VCE
Co
lle
cto
r
cu
rr
ent
I
C
(
A
)
Collector current IC (A)
hFE – IC
D
C
cu
rre
nt
gai
n
h
FE
Collector current IC (A)
VCE (sat) – IC
Col
lect
or
-e
m
itte
rs
a
tu
ra
tion
volta
g
e
V
CE
(
sa
t)
(
V
)
Base-emitter voltage VBE (V)
VBE – IC
Collector-emitter voltage VCE (V)
Safe Operating Area
10
0.01
Common emitter
IC/IB = 40
Tc = 100°C
0.05
0.03
0.1
0.3
1
0.1
0.3
0.5
1
3
25
3
10
0.03
Common emitter
VCE = 2 V
10
0.01
30
50
100
300
1000
0.03
0.1
0.3
1
Tc = 100°C
25
3
500
Common emitter
Tc = 25°C
0
8
2
IB = 10 mA
4
6
2
4
6
8
10
50
70
150
120
30
0
20
100
Common emitter
VCE = 2 V
0
0.4
0.8
1.2
1.6
2.0
8
6
4
2
Tc = 100°C
25
Ambient temperature Ta (°C)
PC – Ta
C
ollec
tor
p
o
w
er
dis
si
pati
on
P
C
(W
)
12
0
(1) Tc = Ta infinite heat sink
(2) Ceramic substrate
50 × 50 × 0.8 mm
(3) No heat sink
25
50
75
100
125
150
175
2
4
6
8
10
(1)
(2)
(3)
* : Single nonrepetitive pulse
Tc = 25°C
** : Pulse width = 10 ms (max)
Duty cycle = 30% (max)
Curves must be derated linearly
with increase in temperature.
0.1
0.3
IC max (continuous)
IC max (pulsed)**
DC operation
Tc = 25°C
VCEO max
10
30
1
3
0.3
0.5
1
3
5
10 ms*
10
100 ms*
1 ms*
相关PDF资料
PDF描述
2SA1242-Y(2-7J1A) 5000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SA1242-Y(2-7B1A) 5000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR
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相关代理商/技术参数
参数描述
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2SA1242-Y(LBSTA1) 制造商:Toshiba America Electronic Components 功能描述:
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