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参数资料
| 型号： | 2SA1298-O-TP |
| 厂商： | MICRO COMMERCIAL COMPONENTS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 800 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | ROHS COMPLIANT, PLASTIC, PACKAGE-3 |
| 文件页数： | 1/3页 |
| 文件大小： | 324K |
| 代理商： | 2SA1298-O-TP |
2SA1298-O
PNP General
Purpose Amplifier
SOT-23
Suggested Solder
Pad Layout
Features
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.110
.120
2.80
3.04
B
.083
.098
2.10
2.64
C
.047
.055
1.20
1.40
D
.035
.041
.89
1.03
E
.070
.081
1.78
2.05
F
.018
.024
.45
.60
G
.0005
.0039
.013
.100
H
.035
.044
.89
1.12
J
.003
.007
.085
.180
K
.015
.020
.37
.51
hFE
DC Current Gain
(IC=-100mAdc, VCE=-1.0Vdc)
(IC=-800mAdc, VCE=-1.0Vdc)
100
320
40
VCE(sat)
Collector-Emitter Saturation Voltage
(IC=-500mAdc, IB=-20mAdc)
-0.4
Vdc
VBE
Base-Emitter Voltage
(IC=-10mAdc, VCE=-1Vdc)
-0.5
-0.8
Vdc
CLASSIFICATION OF hFE(1)
Rank
.079
2.000
inches
mm
.031
.800
.035
.900
.037
.950
.037
.950
A
B
C
D
E
F
G
H
J
omponents
20736 Marilla
Street Chatsworth
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MCC
Revision: A
2011/01/01
TM
Micro Commercial Components
K
E
B
C
E
B
C
www.mccsemi.com
1 of 3
Maximum Ratings
Symbol
Rating
Unit
VCEO
Collector-Emitter Voltage
-30
V
VCBO
Collector-Base Voltage
-35
V
VEBO
Emitter-Base Voltage
-5.0
V
IC
Collector Current, Continuous
-0.8
A
TJ
Operating Junction Temperature
-55 to +150
OC
TSTG
Storage Temperature
-55 to +150
OC
PD
Power Dissipation
0.2
W
Electrical Characteristics @ 25
OC Unless Otherwise Specified
Symbol
Parameter
Min
Type
Max
Units
V(BR)CEO
Collector-Emitter Breakdown Voltage*
(IC=-10mAdc, IB=0)
-30
Vdc
V(BR)CBO
Collector-Base Breakdown Voltage
(IC=-1mAdc, IE=0)
-35
Vdc
V(BR)EBO
Emitter-Base Breakdown Voltage
(IE=-1mAdc, IC=0)
-5.0
Vdc
IcBO
Collector cut-off Current
(VCB=-30Vdc, IE=0
-0.1
uAdc
IEBO
Emitter cut-off Current
(VEB=-5Vdc, IC=0
-0.1
uAdc
fT
Transition Frequency
(IC=-10mAdc, VCE=-5Vdc)
250
MHz
Cob
Collector output capacitance
(IE=0, VCB=-10Vdc,f=1MHz)
13
pF
Range
MARKING
O
100-200
IO
Y
160-320
IY
2SA1298-Y
Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
Power switching application
Low frequency power amplifier application
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
相关PDF资料 |
PDF描述 |
|---|---|
| 2SA1300-Y | 2000 mA, 10 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SA1300-GR | 2000 mA, 10 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SA1300-Y | 2000 mA, 10 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SA1312-BL | 100 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SA1298-Y(TE85L,F) | 制造商:Toshiba 功能描述:PNP |
| 2SA1298-Y,LF | 功能描述:TRANS PNP 25V 0.8A S-MINI 制造商:toshiba semiconductor and storage 系列:- 包装:剪切带（CT） 零件状态:有效 晶体管类型:PNP 电流 - 集电极（Ic）（最大值）:800mA 电压 - 集射极击穿（最大值）:25V 不同?Ib，Ic 时的?Vce 饱和值（最大值）:400mV @ 20mA，500mA 电流 - 集电极截止（最大值）:100nA（ICBO） 不同?Ic，Vce?时的 DC 电流增益（hFE）（最小值）:160 @ 100mA，1V 功率 - 最大值:200mW 频率 - 跃迁:120MHz 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商器件封装:S-Mini 标准包装:1 |
| 2SA1299 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-92S -50V -.2A .3W ECB |
| 2SA1300 | 制造商:Distributed By MCM 功能描述:SUB ONLY TOSHIBA TRANSISTORTO-92 -20V -2A .75W ECB |
| 2SA1300-BL(F) | 制造商:Toshiba 功能描述:PNP Bulk |
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