参数资料
型号: 2SA1310T
厂商: PANASONIC CORP
元件分类: 小信号晶体管
英文描述: 100 mA, 55 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封装: ROHS COMPLIANT, NS-B1, 3 PIN
文件页数: 1/3页
文件大小: 237K
代理商: 2SA1310T
Transistors
1
Publication date: March 2003
SJC00017BED
2SA1310
Silicon PNP epitaxial planar type
For low-frequency and low-noise amplification
Complementary to 2SC3312
■ Features
Allowing supply with the radial taping
Low noise voltage NV
High forward current transfer ratio h
FE
Optimum for high-density mounting
■ Absolute Maximum Ratings T
a
= 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
60
V
Collector-emitter voltage (Base open)
VCEO
55
V
Emitter-base voltage (Collector open)
VEBO
7V
Collector current
IC
100
mA
Peak collector current
ICP
200
mA
Collector power dissipation
PC
300
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
VCBO
IC
= 10 A, I
E
= 0
60
V
Collector-emitter voltage (Base open)
VCEO
IC = 2 mA, IB = 0
55
V
Emitter-base voltage (Collector open)
VEBO
IE = 10 A, IC = 0
7V
Base-emitter voltage
VBE
VCE =
1 V, I
C =
30 mA
1V
Collector-base cutoff current (Emitter open)
ICBO
VCB = 10 V, IE = 0
0.1
A
Collector-emitter cutoff current (Base open)
ICEO
VCE = 10 V, IB = 0
1
A
Forward current transfer ratio *
hFE
VCE =
5 V, I
C =
2 mA
180
700
Collector-emitter saturation voltage
VCE(sat)
IC = 100 mA, IB = 10 mA
0.6
V
Transition frequency
fT
VCB = 5 V, IE = 2 mA, f = 200 MHz
200
MHz
Noise voltage
NV
VCE = 10 V, IC = 1 mA, GV = 80 dB
150
mV
Rg = 100 k
, Function = FLAT
■ Electrical Characteristics T
a
= 25°C ± 3°C
Unit: mm
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
4.0±0.2
0.75 max.
2.0±0.2
0.45
(2.5) (2.5)
0.7±0.1
23
1
+0.20
–0.10
0.45
+0.20
–0.10
7.6
3.0
±
0.2
(0.8)
15.6
±
0.5
1 : Emitter
2 : Collector
3 : Base
NS-B1 Package
Rank
R
S
T
hFE
180 to 360
260 to 520
360 to 700
This product complies with the RoHS Directive (EU 2002/95/EC).
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
相关PDF资料
PDF描述
2SA1312BLTE85R 100 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236
2SA1312BLTE85L 100 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236
2SA1312TE85R 100 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236
2SA1313YTE85L 500 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236
2SA1314-A 2000 mA, 10 V, PNP, Si, SMALL SIGNAL TRANSISTOR
相关代理商/技术参数
参数描述
2SA1312-BL(TE85L,F 制造商:Toshiba 功能描述:PNP
2SA1312-BL(TE85L,F) 制造商:Toshiba America Electronic Components 功能描述:PNP 120V TRANSISTOR. - Tape and Reel
2SA1312-GR(TE85L,F 制造商:Toshiba 功能描述:PNP 制造商:Toshiba 功能描述:PNP Cut Tape
2SA1312GRTE85LF 功能描述:两极晶体管 - BJT PNP Audio Amp VCEO -120V HFE 700 RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
2SA1313-O(TE85L,F) 功能描述:TRANS PNP 50V 500MA TO236-3 制造商:toshiba semiconductor and storage 系列:- 包装:剪切带(CT) 零件状态:Digi-Key 停止供應 晶体管类型:PNP 电流 - 集电极(Ic)(最大值):500mA 电压 - 集射极击穿(最大值):50V 不同?Ib,Ic 时的?Vce 饱和值(最大值):250mV @ 10mA,100mA 电流 - 集电极截止(最大值):100nA(ICBO) 不同?Ic,Vce?时的 DC 电流增益(hFE)(最小值):70 @ 100mA,1V 功率 - 最大值:200mW 频率 - 跃迁:200MHz 工作温度:150°C(TJ) 安装类型:表面贴装 封装/外壳:TO-236-3,SC-59,SOT-23-3 供应商器件封装:S-Mini 标准包装:1