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参数资料
| 型号： | 2SA1316-GR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 100 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封装： | 2-5F1B, SC-43, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 620K |
| 代理商： | 2SA1316-GR |
2SA1316
2007-11-01
1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1316
For Low Noise Audio Amplifier Applications and
Recommended for the First Stages of MC Head
Amplifiers
Very low noise in the region of low signal source impedance
equivalent input noise voltage: En = 0.6 nV/Hz1/2 (typ.)
Low pulse noise. Low 1/f noise
Low base spreading resistance: rbb’ = 2.0 (typ.)
Complementary to 2SC3329
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
80
V
Collector-emitter voltage
VCEO
80
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
100
mA
Base current
IB
20
mA
Collector power dissipation
PC
400
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 80 V, IE = 0
0.1
μA
Emitter cut-off current
IEBO
VEB = 5 V, IC = 0
0.1
μA
Collector-emitter breakdown voltage
V (BR) CEO
IC = 1 mA, IB = 0
80
V
DC current gain
hFE
(Note)
VCE = 6 V, IC = 2 mA
200
700
Collector-emitter saturation voltage
VCE (sat)
IC = 10 mA, IB = 1 mA
0.1
V
Base-emitter voltage
VBE
VCE = 6 V, IC = 2 mA
0.6
V
Base spreading resistance
rbb’
VCE = 6 V, IC = 1 mA, f = 100 MHz
2.0
Ω
Transition frequency
fT
VCE = 6 V, IC = 1 mA, f = 100 MHz
50
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
6.2
pF
VCE = 6 V, IC = 0.1 mA
f
= 10 Hz, RG = 10 kΩ
1
6
VCE = 6 V, IC = 0.1 mA
f
= 1 kHz, RG = 10 kΩ
0.5
2
Noise figure
NF
VCE = 6 V, IC = 0.1 mA
f
= 1 kHz, RG = 100 Ω
2.5
dB
Note: hFE classification GR: 200~400, BL: 350~700
Unit: mm
JEDEC
TO-92
JEITA
SC-43
TOSHIBA
2-5F1B
Weight: 0.21 g (typ.)
相关PDF资料 |
PDF描述 |
|---|---|
| 2SA1316-BL | 100 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SA1317-S | 200 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SA1317-U | 200 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SA1317-R | 200 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SA1317-T | 200 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SA1317 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SA1317T-AC | 制造商:ON Semiconductor 功能描述: |
| 2SA1318 | 制造商:Distributed By MCM 功能描述:SUB ONLY SANYO TRANSISTORTO-92-60V -.2A .6W ECB |
| 2SA1319T-AA | 制造商:SANYO Semiconductor Co Ltd 功能描述:TRANS PNP HIGHV 160V 0.7A TO-92 |
| 2SA1320 | 制造商:Toshiba America Electronic Components 功能描述:Trans GP BJT PNP 250V 0.05A 3-Pin TO-92 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
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