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参数资料
| 型号： | 2SA1327A-O |
| 元件分类： | 功率晶体管 |
| 英文描述： | 10 A, 20 V, PNP, Si, POWER TRANSISTOR |
| 封装： | LEAD FREE, 2-10R1A, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 134K |
| 代理商： | 2SA1327A-O |
2SA1327A
2006-11-09
1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1327A
Strobe Flash Applications
Audio Power Amplifier Applications
High DC current gain: hFE = 70 (min) (VCE = 2 V, IC = 1 A)
Low collector saturation voltage: VCE (sat) = 0.5 V (max)
(IC = 8 A, IB = 0.4 A)
High collector power dissipation: PC = 20 W (Tc = 25°C)
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
50
V
Collector-emitter voltage
VCEO
20
V
Emitter-base voltage
VEBO
8
V
DC
IC
10
Collector current
Pulse
ICP
20
A
Base current
IB
2
A
Ta = 25°C
2.0
Collector power
dissipation
Tc = 25°C
PC
20
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-10R1A
Weight: 1.7 g (typ.)
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| 2SA1327O | 10 A, 20 V, PNP, Si, POWER TRANSISTOR |
| 2SA1327Y | 10 A, 20 V, PNP, Si, POWER TRANSISTOR |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SA1327A-O(F) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SA1327A-Y(F) | 制造商:Toshiba 功能描述:PNP 制造商:Toshiba 功能描述:PNP Bulk |
| 2SA1329 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SA1330 | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SA1330-L-A | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:0 |
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