参数资料
型号: 2SA1358-O
元件分类: 功率晶体管
英文描述: 1 A, 120 V, PNP, Si, POWER TRANSISTOR
封装: 2-8H1A, 3 PIN
文件页数: 3/4页
文件大小: 119K
代理商: 2SA1358-O
2SA1358
2004-07-07
3
C
ollec
tor
po
wer
dis
si
pati
on
P
C
(W
)
C
olle
ct
or
cur
re
nt
I
C
(m
A)
Collector-emitter voltage VCE (V)
IC – VCE
Coll
ect
or
cur
re
nt
I
C
(m
A)
Collector current IC (mA)
hFE – IC
D
C
c
urr
en
tg
ai
n
h
FE
Collector current IC (mA)
VCE (sat) – IC
Col
lect
or
-e
m
itte
rs
a
tu
ra
tion
volta
g
e
V
CE
(s
a
t)
(
V
)
Base-emitter voltage VBE (V)
IC – VBE
Ambient temperature Ta (°C)
PC – Ta
Safe Operating Area
Coll
ect
or
cur
re
nt
I
C
(m
A)
Collector-emitter voltage VCE (V)
25
Common emitter
IC/IB = 10
3
0.03
0.1
0.3
30
100
Tc = 100°C
25
1000
300
10
0.05
0.5
1
(1) Tc = Ta Infinite heat sink
(2) No heat sink
0
40
60
100
80
20
12
0
4
2
6
(1)
(2)
120
140
160
8
10
25
10
300
Common emitter
VCE = 5 V
30
50
100
1000
30
100
1000
Tc = 100°C
25
300
3
500
3
10
30
100
300
10
50
300
500
1000
*: Single nonrepetitive
pulse Tc = 25°C
Curves must be derated
linearly with increase in
temperature.
100
3000
IC max (pulsed)*
IC max (continuous)
VCEO max
1 ms*
10 ms*
100 ms*
DC operation
Tc = 25°C
30
25
Common emitter
VCE = 5 V
1000
400
600
800
Tc = 100°C
25
200
0.2
0.4
0.8
1.0
0.6
0
1.2
0
Common emitter
Tc = 25°C
1200
600
6
8
12
10
3
4
15
7
IB = 1 mA
0
5
4
2
200
400
800
1000
2
相关PDF资料
PDF描述
2SA1358-Y 1 A, 120 V, PNP, Si, POWER TRANSISTOR
2SA1360-Y 0.05 A, 150 V, PNP, Si, POWER TRANSISTOR
2SA1374CTZ 100 mA, 55 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SA1374CRF 100 mA, 55 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SA1374DRF 100 mA, 55 V, PNP, Si, SMALL SIGNAL TRANSISTOR
相关代理商/技术参数
参数描述
2SA1358-O(Q) 制造商:Toshiba 功能描述:PNP 制造商:Toshiba 功能描述:PNP Cut Tape
2SA1358Y 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR
2SA1358-Y(Q) 制造商:Toshiba 功能描述:PNP Bulk 制造商:Toshiba 功能描述:Trans GP BJT PNP 120V 1A 3-Pin TO-126IS
2SA1359-Y(Q) 制造商:Toshiba 功能描述:PNP 制造商:Toshiba 功能描述:PNP Bulk
2SA1360-O(Q) 制造商:Toshiba 功能描述:PNP 制造商:Toshiba 功能描述:PNP Bulk