参数资料
型号: 2SA1359
元件分类: 功率晶体管
英文描述: 3 A, 40 V, PNP, Si, POWER TRANSISTOR
封装: LEAD FREE, 2-8H1A, 3 PIN
文件页数: 1/4页
文件大小: 130K
代理商: 2SA1359
2SA1359
2006-11-09
1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1359
Audio Frequency Power Amplifier
Low-Speed Switching
Suitable for the output stage of 5-watt car radios and car stereos.
Good hFE linearity
Complementary to 2SC3422.
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
40
V
Collector-emitter voltage
VCEO
40
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
3
A
Base current
IB
1
A
Ta = 25°C
1.5
Collector power
dissipation
Tc = 25°C
PC
10
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Unit: mm
JEDEC
JEITA
TOSHIBA
2-8H1A
Weight: 0.82 g (typ.)
相关PDF资料
PDF描述
2SA1359-O 3 A, 40 V, PNP, Si, POWER TRANSISTOR
2SA1362-Y 800 mA, 15 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236
2SA1362-GR 800 mA, 15 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236
2SA1363-13-1F 2000 mA, 16 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SA1363-T13-1G 2000 mA, 16 V, PNP, Si, SMALL SIGNAL TRANSISTOR
相关代理商/技术参数
参数描述
2SA1359-Y(Q) 制造商:Toshiba 功能描述:PNP 制造商:Toshiba 功能描述:PNP Bulk
2SA1360-O(Q) 制造商:Toshiba 功能描述:PNP 制造商:Toshiba 功能描述:PNP Bulk
2SA1360-Y(Q) 功能描述:两极晶体管 - BJT Pb-FF TO126 PLS PLN-N,ACTIVE, RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
2SA1362 制造商:Distributed By MCM 功能描述:SUB ONLY TOSHIBA TRANS. SC-59-15V -.8A .2WSURFACE MOUNT
2SA1362-GR(T5L,F,T 功能描述:两极晶体管 - BJT Bipolar Small-Signal Transistors RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2