参数资料
型号: 2SA1376-L
元件分类: 小信号晶体管
英文描述: 100 mA, 180 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
封装: SC-43B, 3 PIN
文件页数: 1/8页
文件大小: 236K
代理商: 2SA1376-L
To our customers,
Old Company Name in Catalogs and Other Documents
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas Electronics Corporation took over all the business of both
companies. Therefore, although the old company name remains in this document, it is a valid
Renesas Electronics document. We appreciate your understanding.
Renesas Electronics website: http://www.renesas.com
April 1st, 2010
Renesas Electronics Corporation
Issued by:
Renesas Electronics Corporation (http://www.renesas.com)
Send any inquiries to http://www.renesas.com/inquiry.
相关PDF资料
PDF描述
2SA1376-A 100 mA, 180 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
2SA1400-ZM 500 mA, 400 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SA1400-ZL 500 mA, 400 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SA1647L 5000 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-251AA
2SA1647-ZL 5000 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-252AA
相关代理商/技术参数
参数描述
2SA1376-L(A) 制造商:Renesas Electronics Corporation 功能描述:
2SA1381 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR
2SA1381CSTU 功能描述:两极晶体管 - BJT PNP 300V 0.1A 7W RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
2SA1381DSTU 功能描述:两极晶体管 - BJT PNP 300V 0.1A 7W RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
2SA1381ESTU 功能描述:两极晶体管 - BJT PNP 300V 0.1A 7W RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2