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| 型号： | 2SA1376A-L-A |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 100 mA, 200 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封装： | SC-43B, 3 PIN |
| 文件页数： | 1/6页 |
| 文件大小： | 105K |
| 代理商： | 2SA1376A-L-A |
1998
Document No. D16194EJ1V0DS00
Date Published April 2002 N CP(K)
Printed in Japan
SILICON TRANSISTORS
2SA1376, 1376A
PNP SILICON EPITAXIAL TRANSISTOR
FOR HIGH VOLTAGE AMPLIFIERS
DATA SHEET
2002
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
FEATURES
High voltage
VCEO:
180 V / 200 V
(2SA1376/2SA1376A)
Excellent hFE linearity
High total power dissipation in small dimension:
PT: 0.75 W
Complementary transistor with 2SC3478 and 2SC3478A
ABSOLUTE MAXIMUM RATINGS (Ta = 25
°°°°C)
2SA1376/2SA1376A
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
200
V
Collector to emitter voltage
VCEO
180/200
V
Emitter to base voltage
VEBO
5
V
Collector current (DC)
IC(DC)
100
mA
Collector current (pulse)
IC(pulse)*
200
mA
Total power dissipation
PT
0.75
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
*PW
≤ 10 ms, duty cycle ≤ 50%
PACKAGE DRAWING (UNIT: mm)
ELECTRICAL CHARACTERISTICS (Ta = 25
°°°°C)
2SA1376/2SA1376A
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
ICBO
VCB =
200 V, IE = 0
100
nA
Emitter cutoff current
IEBO
VEB =
5 V, IC = 0
100
nA
DC current gain
hFE1 **
VCE =
10 V, IC = 10 mA
135
300/200
600/400
DC current gain
hFE2 **
VCE =
10 V, IC = 100 mA
81
DC base voltage
VBE **
VCE =
10 V, IC = 10 mA
600
650
700
mV
Collector saturation voltage
VCE(sat) **
IC =
50 mA, IB = 5 mA
0.2
0.3
V
Base saturation voltage
VBE(sat) **
IC =
50 mA, IB = 5 mA
0.8
1.2
V
Output capacitance
Cob
VCB =
30 V, IE = 0, f = 1.0 MHz
3.5
4.0
pF
Gain bandwidth product
fT
VCE =
10 V, IE = 10 mA
80
120
MHz
Turn-on time
ton
0.16
s
Turn-off time
toff
IC =
10 mA, IB1 = IB2 = 1 mA,
VCC = –10 V
1.5
s
** Pulse test PW
≤ 350
s, duty cycle ≤ 2% per pulsed
相关PDF资料 |
PDF描述 |
|---|---|
| 2SA1376A-L | 100 mA, 200 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SA1376-K | 100 mA, 180 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SA1376 | 100 mA, 180 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SA1376A | 100 mA, 200 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SA1376A-A | 100 mA, 200 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SA1376-L(A) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SA1381 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SA1381CSTU | 功能描述:两极晶体管 - BJT PNP 300V 0.1A 7W RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SA1381DSTU | 功能描述:两极晶体管 - BJT PNP 300V 0.1A 7W RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SA1381ESTU | 功能描述:两极晶体管 - BJT PNP 300V 0.1A 7W RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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