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参数资料
| 型号： | 2SA1380-D |
| 元件分类： | 功率晶体管 |
| 英文描述： | 0.1 A, 200 V, PNP, Si, POWER TRANSISTOR, TO-126 |
| 封装： | TO-126, 3 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 39K |
| 代理商： | 2SA1380-D |
92502AS (KT)/71598HA (KT)/10996TS (KOTO) X-6422/3237KI/D134MW, TS No.1425-1/5
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP/NPN Epitaxial Planar Silicon Transistors
Ultrahigh-Definition CRT Display,
Video Output Applications
Ordering number:ENN1425C
2SA1380/2SC3502
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
( ) : 2SA1380
Specifications
Absolute Maximum Ratings at Ta = 25C
Electrical Characteristics at Ta = 25C
Package Dimensions
unit:mm
2009B
[2SA1380/2SC3502]
Features
High breakdown voltage : VCEO≥200V.
Small reverse transfer capacitance and excellent
high-frequnecy characteristics
: Cre=1.2pF (NPN), 1.7pF (PNP), VCB=30V.
Adoption of FBET process
1 : Emitter
2 : Collector
3 : Base
SANYO : TO-126
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Continued on next page.
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