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参数资料
| 型号： | 2SA1413-ZK |
| 元件分类： | 功率晶体管 |
| 英文描述： | 1 A, 600 V, PNP, Si, POWER TRANSISTOR, TO-252AA |
| 封装： | TO-252, MP-3Z, 3 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 853K |
| 代理商： | 2SA1413-ZK |
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SILICON POWER TRANSISTOR
2SA1413-Z
PNP SILICON TRIPLE DIFFUSED TRANSISTOR
DATA SHEET
Document No. D18251EJ4V0DS00 (4th edition)
(Previous No. TC-1636A)
Date Published June 2006 NS CP(K)
Printed in Japan
1985, 2006
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
DESCRIPTION
The 2SA1413-Z is designed for High Voltage Switching, especially in
Hybrid Integrated Circuits.
FEATURES
High Voltage: VCEO =
600 V
High Speed: tf ≤ 1.0
μs
Complement to 2SC3632-Z
ABSOLUTE MAXIMUM RATINGS (TA = 25
°C)
Collector to base voltage
VCBO
600
V
Collector to emitter voltage
VCEO
600
V
Base to emitter voltage
VEBO
7
V
Collector current (DC)
IC(DC)
1.0
A
Collector current (pulse)
Note 1
IC(pulse)
2.0
A
Total power dissipation (TA = 25
°C)
Note 2
PT
2.0
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Notes 1. PW
≤ 10 ms, Duty Cycle ≤ 50%
2. When mounted on ceramic substrate of 7.5 cm
2 × 0.7 mm
PACKAGE DRAWING (Unit: mm)
12 3
4
6.5 ±0.2
4.4 ±0.2
5.0 ±0.2
0.5 ±0.1
5.6
±0.3
9.5
±0.5
2.5
±0.5
1.0
±0.5
1.5
0.1
+0.2
2.3 ±0.2
0.5 ±0.1
Note
0.4
MIN.
0.5
TYP.
0.15 ±0.15
2.3 ±0.3
5.5
±0.2
TO-252 (MP-3Z)
1. Base
2. Collector
3. Emitter
4. Collector Fin
Note The depth of notch at the top of the fin is
from 0 to 0.2 mm.
<R>
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SA1413-Z-K-E1-AZ | 制造商:Renesas 功能描述:2SA1413-Z-K-E1-AZ |
| 2SA1415S-TD-E | 制造商:SANYO 功能描述:omo 160V 0.14A 140 to 280 PCP Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:TRANSISTOR PNP 160V 0.14A SOT89 制造商:Sanyo 功能描述:0 |
| 2SA1416S-TD-E | 功能描述:两极晶体管 - BJT BIP PNP 1A 100V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SA1416T-TD-E | 功能描述:两极晶体管 - BJT BIP PNP 1A 100V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SA1417S-TD-E | 功能描述:两极晶体管 - BJT BIP PNP 2A 100V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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