参数资料
型号: 2SA1432O
元件分类: 小信号晶体管
英文描述: 100 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封装: LEAD FREE, 2-7D101A, 3 PIN
文件页数: 1/6页
文件大小: 152K
代理商: 2SA1432O
2SA1432
2009-12-21
1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1432
High Voltage Control Applications
Plasma Display, Nixie Tube Driver Applications
Cathode Ray Tube Brightness Control Applications
High voltage: VCBO = 300 V, VCEO = 300 V
Low saturation voltage: VCE (sat) = 0.5 V (max)
Small collector output capacitance: Cob = 6 pF (typ.)
Complementary to 2SC3672
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
300
V
Collector-emitter voltage
VCEO
300
V
Emitter-base voltage
VEBO
8
V
Collector current
IC
100
mA
Base current
IB
20
mA
Collector power dissipation
PC
1000
mW
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note1: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Unit: mm
JEDEC
JEITA
TOSHIBA
2-7D101A
Weight: 0.2 g (typ.)
相关PDF资料
PDF描述
2SA1432R 100 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR
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