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参数资料
| 型号： | 2SA1451A-O |
| 元件分类： | 功率晶体管 |
| 英文描述： | 12 A, 50 V, PNP, Si, POWER TRANSISTOR |
| 封装： | LEAD FREE, 2-10R1A, 3 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 148K |
| 代理商： | 2SA1451A-O |
2SA1451A
2006-11-09
1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1451A
High-Speed, High-Current Switching Applications
Low collector saturation voltage
: VCE (sat) = 0.4 V (max) (IC = 6 A)
High-speed switching: tstg = 1.0 μs (typ.)
Complementary to 2SC3709A
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
60
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
6
V
Collector current
IC
12
A
Base current
IB
2
A
Collector power dissipation
(Tc = 25°C)
PC
30
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-10R1A
Weight: 1.7 g (typ.)
相关PDF资料 |
PDF描述 |
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| 2SA1451A-Y | 12 A, 50 V, PNP, Si, POWER TRANSISTOR |
| 2SA1460-K | 1000 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SA1460-K-AZ | 1000 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SA1460-AZ | 1000 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SA1460-L-AZ | 1000 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SA1451A-O(F) | 功能描述:两极晶体管 - BJT PNP 50V 12A Transistor RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SA1451AY | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SA1451A-Y(F) | 功能描述:两极晶体管 - BJT PNP 50V 12A Transistor RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SA1452A-Y(F) | 功能描述:两极晶体管 - BJT PNP 80V 12A Transistor RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SA1452A-YF | 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR 2SA1452A-Y |
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