- 您现在的位置：买卖IC网 > PDF目录55785 > 2SA1464-P-TP (MICRO COMMERCIAL COMPONENTS) 500 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR PDF资料下载
参数资料
| 型号： | 2SA1464-P-TP |
| 厂商： | MICRO COMMERCIAL COMPONENTS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 500 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件页数： | 1/4页 |
| 文件大小： | 610K |
| 代理商： | 2SA1464-P-TP |
PNP Silicon
Epitaxial Transistors
Features
omponents
20736 Marilla
Street Chatsworth
!"#
$% !"#
MCC
Revision:
A
20
11/10/17
TM
Micro Commercial Components
www.mccsemi.com
1 of 4
SOT-23
Suggested Solder
Pad Layout
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.110
.120
2.80
3.04
B
.083
.
104
2.10
2.64
C
.047
.055
1.20
1.40
D
.035
.041
.89
1.03
E
.070
.081
1.78
2.05
F
.018
.024
.45
.60
G
.0005
.0039
.013
.100
H
.035
.044
.89
1.12
J
.003
.007
.085
.180
K
.015
.020
.37
.51
A
B
C
D
E
F
G
H
J
.079
2.000
inches
mm
.031
.800
.035
.900
.037
.950
.037
.950
K
Maximum Ratings @ Ta = 25
(unless otherwise noted)
Symbol
Parameter
Value
Unit
IC
Collector Current
-0.5
A
PD
Collector Power Dissipation
0.2
W
TJ
Junction Temperature
150
TSTG
Storage Temperature Range
-55 to +150
Electrical Characteristics @ 25
OC Unless Otherwise Specified
Symbol
Parameter
Min
TYPE
Max
Units
OFF CHARACTERISTICS
VCEO
Collector-Emitter Breakdown Voltage
-40
V
VCBO
Collector-Base Breakdown Voltage
-60
V
VEBO
Collector-Base Breakdown Voltage
-5.0
V
ICBO
Collector-Base Cutoff Current
(VCB=-40Vdc, IE=0)
- 100
nAdc
IEBO
Emitter-Base Cutoff Current
(VEB=-4.0Vdc, IC=0)
- 100
nAdc
ON CHARACTERISTICS
HFE
DC Current Gain (IC=-150mAdc, VCE=-2.0Vdc)
75
140
300
(IC=-500mAdc, VCE=-2.0Vdc)
20
50
VCE(sat)
Collector-Emitter Saturation Voltage *
(IC=-500mAdc, IB=-50mAdc)
-0.45
-0.75
Vdc
)7
Gain bandwidth product
(VCE=-10Vdc,IE=20mAdc)
150
400
MHZ
E
B
C
Cob
(VCB=-10Vdc,IE=0,f=1MHZ)
5
8
pF
2SA1464-Q
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
High fT: fT=400MHZ
2SA1464-P
2SA1464-R
VBE(sat)
Base-Emitter Saturation Voltage *
(IC=-500mAdc, IB=-50mAdc)
-1
-1.3
Vdc
Ton
Tstg
Toff
Turn-on time
Storage time
Turn-off time
VCC=-30V ,
IC=150mA ,
IB1=-IB2 =15mA
35
225
255
ns
CLASSIFICATION OF
hFE
Rank
P
Q
R
Range
75-150
100-200
150-300
Marking
Y12
Y13
Y14
相关PDF资料 |
PDF描述 |
|---|---|
| 2SA1484-E | SMALL SIGNAL TRANSISTOR |
| 2SA1484-D | SMALL SIGNAL TRANSISTOR |
| 2SA1492Y | 15 A, 180 V, PNP, Si, POWER TRANSISTOR |
| 2SA1501 | 5 A, 400 V, PNP, Si, POWER TRANSISTOR, TO-220F |
| 2SA1618YTE85L | 150 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SA1464-T1B-A | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:PNP Transistor,40V,0.5A,MINI MOLD 制造商:Renesas 功能描述:Trans GP BJT PNP 40V 0.5A 3-Pin Mini-Mold T/R |
| 2SA1464-T1B-A(Y13) | 制造商:Renesas Electronics 功能描述:PNP |
| 2SA1464-T1B-A(Y14) | 制造商:Renesas Electronics 功能描述:PNP |
| 2SA1464-T1B-AY12 | 制造商:Renesas Electronics 功能描述:PNP |
| 2SA1464-Y12(T1B-A) | 制造商:Renesas Electronics Corporation 功能描述: |
发布紧急采购，3分钟左右您将得到回复。