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参数资料
| 型号： | 2SA1498P |
| 厂商： | PANASONIC CORP |
| 元件分类： | 功率晶体管 |
| 英文描述： | 0.6 A, 400 V, PNP, Si, POWER TRANSISTOR |
| 文件页数： | 1/4页 |
| 文件大小： | 179K |
| 代理商： | 2SA1498P |
1
Power Transistors
2SA1498
Silicon PNP epitaxial planar type
For high-speed switching
s Features
q
High foward current transfer ratio hFE
q
High-speed switching
q
High collector to base voltage VCBO
q
N type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
s Absolute Maximum Ratings (T
C=25C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
–400
–7
–1.2
– 0.6
25
1.3
150
–55 to +150
Unit
V
A
W
C
s Electrical Characteristics (T
C=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
ICBO
IEBO
VCEO
hFE1
*
hFE2
VCE(sat)
VBE(sat)
fT
ton
tstg
tf
Conditions
VCB = –400V, IE = 0
VEB = –7V, IC = 0
IC = –10mA, IB = 0
VCE = –5V, IC = –100mA
VCE = –5V, IC = –300mA
IC = –300mA, IB = –60mA
VCE = –10V, IC = –100mA, f = 1MHz
IC = –300mA,
IB1 = –60mA, IB2 = 60mA,
VCC = –100V
min
–400
30
10
typ
15
max
–100
160
–1.0
–1.5
1.0
3.5
1.0
Unit
A
V
MHz
s
*h
FE1 Rank classification
Rank
Q
P
O
hFE1
30 to 60
50 to 100
80 to 160
TC=25°C
Ta=25
°C
Unit: mm
1:Base
2:Collector
3:Emitter
N Type Package
8.5
±0.2
6.0
±0.5
10.0
±0.3
10.5min.
2.0
1.5
±0.1
1.5max.
0.8
±0.1
5.08
±0.5
2.54
±0.3
1.1max.
0.5max.
1.0
±0.1
3.4
±0.3
2
13
Unit: mm
8.5
±0.2
4.4
±0.5
2.0
10.0
±0.3
14.7
±0.5
4.4
±0.5
6.0
±0.3
3.4
±0.3
2.54
±0.3
5.08
±0.5
1.0
±0.1
0.8
±0.1
1.5
+0
–0.4
3.0
+0.4
–0.2
0 to 0.4
1.1 max.
R0.5
123
1:Base
2:Collector
3:Emitter
N Type Package (DS)
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Please
visit
following
URL
about
latest
information.
http://panasonic.co.jp/semicon/e-index.html
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| 2SA1507T | 功能描述:两极晶体管 - BJT BIP PNP 1.5A 160V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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