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参数资料
| 型号： | 2SA1515STP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1000 mA, 32 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | SPT, SC-72, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 143K |
| 代理商： | 2SA1515STP |
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c
2010 ROHM Co., Ltd. All rights reserved.
2010.04 - Rev.D
Medium Power Transistor (
32V,1A)
2SA1515S / 2SB1237
Features
Dimensions (Unit : mm)
1) Low VCE(sat).
VCE(sat) =
0.2V(Typ.)
(IC / IB =
500mA / 50mA)
2) Compliments 2SD1858
Structure
Epitaxial planar type
PNP silicon transistor
Absolute maximum ratings (Ta=25
C)
1 Single pulse, Pw=100ms
2 Printed circuit board, 1.7 mm thick, collector copper plating 100mm2or larger.
Parameter
VCBO
VCEO
VEBO
PC
Tj
Tstg
40
V
A(DC)
W
32
5
1
IC
A(Pulse)
2
0.3
1
1
2
2SA1515S
2SB1237
150
55 to +150
Symbol
Limits
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
C
Electrical characteristics (Ta=25
C)
Transition frequency
Output capacitance
DC current transfer ratio
VCE
=
3V, IC= 0.1A
Parameter
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE
VCE(sat)
fT
Cob
Min.
40
32
5
120
0.2
150
20
0.5
390
0.5
30
VIC
=
50μA
IC
=
1mA
IE
=
50μA
VCB
=
20V
VEB
=
4V
IC/IB
=
500mA/50mA
VCE
=
5V, IE=50mA, f=30MHz
VCB
=
10V, IE=0A, f=1MHz
V
μA
V
MHz
pF
Typ.
Max.
Unit
Conditions
Measured using pulse current.
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
2SB1237
(1) Emitter
(2) Collector
(3) Base
ROHM :
ATV
1.0
6.8 0.2
2.5 0.2
1.05
0.45 0.1
2.54 2.54
0.5 0.1
0.9
4.4
0.2
14.5
0.5
(1)
(2)
(3)
0.65Max.
+
+
+
3
0.2
(15Min.)
4 0.2
0.45
5
(1) (2) (3)
+0.15
0.05
2.5 +0.4
0.1
3Min.
(1) Emitter
(2) Collector
(3) Base
ROHM : SPT
EIAJ : SC-72
2SA1515S
+
+
2 0.2
0.45
0.5
0.05
+0.15
+
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SA1515STPQ | 功能描述:两极晶体管 - BJT DRIVER PNP 32V 1A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SA1515STPQ/R | 制造商:ROHM Semiconductor 功能描述:Transistor, PNP, Driver, -32V, -1A, SPT |
| 2SA1515STPR | 功能描述:两极晶体管 - BJT TRANS GP BJT PNP 32V 1A 3PIN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SA1518-TB-E | 制造商:SANYO 功能描述:omo 50V 0.5A 50 CP Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:TRANS PNP +RESIS 50V 0.5A SOT23 制造商:Sanyo 功能描述:0 |
| 2SA1519-TB-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:TRANS PNP +RESIS 50V 0.5A SOT23 |
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