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参数资料
| 型号： | 2SA1532GB |
| 厂商： | PANASONIC CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 30 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | ROHS COMPLIANT, SMINI3-F2, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 282K |
| 代理商： | 2SA1532GB |
Transistors
1
Publication date: July 2007
SJC00346BED
This product complies with the RoHS Directive (EU 2002/95/EC).
2SA1532G
Silicon PNP epitaxial planar type
For low-frequency amplification
Complementary to 2SC3930G
■ Features
High transition frequency f
T
S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing
■ Absolute Maximum Ratings T
a
= 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
30
V
Collector-emitter voltage (Base open)
VCEO
20
V
Emitter-base voltage (Collector open)
VEBO
5V
Collector current
IC
30
mA
Collector power dissipation
PC
150
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Base-emitter saturation voltage
VBE
VCE
= 10 A, I
C
= 1 mA
0.7
V
Collector-base cutoff current (Emitter open)
ICBO
VCB = 10 V, IE = 0
0.1
A
Collector-emitter cutoff current (Base open)
ICEO
VCE = 20 V, IB = 0
100
A
Emitter-base cutoff current (Collector open)
IEBO
VEB
= 5 V, I
C
= 0
10
A
Forward current transfer ratio *
hFE
VCE = 10 V, IC = 1 mA
70
220
Collector-emitter saturation voltage
VCE(sat)
IC = 10 mA, IB = 1 mA
0.1
V
Transition frequency
fT
VCB
= 10 V, I
E
= 1 mA, f = 200 MHz
150
300
MHz
Noise figure
NF
VCB = 10 V, IE = 1 mA, f = 5 MHz
2.8
4.0
dB
Reverse transfer impedance
Zrb
VCB = 10 V, IE = 1 mA, f = 2 MHz
22
60
Common-emitter reverse transfer capacitance
Cre
VCB
= 10 V, I
E
= 1 mA, f = 10.7 MHz
1.2
2.0
pF
■ Electrical Characteristics T
a
= 25°C ± 3°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
B
C
hFE
70 to 140
110 to 220
■ Package
Code
SMini3-F2
Marking Symbol: E
Pin Name
1. Base
2. Emitter
3. Collector
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
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| 2SA1534ARA | 功能描述:TRANS PNP 50VCEO 1A TO-92NL RoHS:否 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)（最大）:1A 电压 - 集电极发射极击穿（最大）:30V Ib、Ic条件下的Vce饱和度（最大）:200mV @ 100mA，1A 电流 - 集电极截止（最大）:100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR |
| 2SA1534ASA | 功能描述:TRANS PNP 50VCEO 1A TO-92NL RoHS:是 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)（最大）:1A 电压 - 集电极发射极击穿（最大）:30V Ib、Ic条件下的Vce饱和度（最大）:200mV @ 100mA，1A 电流 - 集电极截止（最大）:100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR |
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