参数资料
型号: 2SA1576UBR
元件分类: 小信号晶体管
英文描述: 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封装: UMT3F, 3 PIN
文件页数: 1/3页
文件大小: 136K
代理商: 2SA1576UBR
1/2
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c
2009 ROHM Co., Ltd. All rights reserved.
2010.09 - Rev.D
General purpose small signal amplifier
(50V, 0.15A)
2SA1576UB
Applications
Dimensions (Unit : mm)
General purpose small signal amplifier.
Features
1) Excellent hFE linearity.
2) Complements the 2SC4081UB.
Structure
PNP silicon epitaxial planar transistor.
Absolute maximum ratings (Ta=25
C)
1
1 Pw=1ms Single pulse
2 Each terminal mounted on a recommended land
2
Parameter
VCBO
VCEO
VEBO
IC
ICP
PD
Tj
Tstg
60
V
mA
C
50
6
150
mW
200
150
55 to +150
Symbol
Limits
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
Electrical characteristics (Ta=25
C)
Parameter
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE
VCE(sat)
fT
Cob
Min.
60
50
6
120
140
4.0
100
390
0.5
5.0
VIC
= 50μA
IC
= 1mA
IE
= 50μA
VCB
= 60V
VEB
= 6V
VCE
= 6V, IC= 1mA
IC/IB
= 50mA/5mA
VCE
= 12V, IE=2mA, f=100MHz
VCB
= 12V, IE=0A, f=1MHz
V
nA
V
MHz
pF
Typ.
Max.
Unit
Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Output capacitance
UMT3F
Each lead has same dimensions
2.0
0.32
0.65 0.65
1.3
2.1
1.25
0.425
(1)
(2)
(3)
0.9
0.53
0.13
(1) Base
(2) Emitter
(3) Collector
Abbreviated symbol : F
= Denotes hFE
相关PDF资料
PDF描述
2SA1576UB-R 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SA1577-Q-TP 500 mA, 32 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SA1577-TP 500 mA, 32 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SA1577-P-TP 500 mA, 32 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SA1585STP 2000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR
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