参数资料
型号: 2SA1585S
厂商: MICRO COMMERCIAL COMPONENTS
元件分类: 小信号晶体管
英文描述: 2000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封装: PLASTIC, TO-92S, 3 PIN
文件页数: 1/1页
文件大小: 50K
代理商: 2SA1585S
2SA1585S
PNP
Plastic-Encapsulate
Transistors
Features
Power dissipation: PD = 0.4W(Tamb=25 )
Collector current: ICM = -2A
Collector-base voltage: V(BR)CBO = -20V
Operating and storage junction temperature range
TJ, Tstg: -55
to + 150
Electrical Characteristics @ 25
Unless Otherwise Specified
Symbol
Parameter
Min
Typ
Max
Unit
VCEO
Collector-Emitter Voltage
(IC=-50
A, IE=0)
-20
---
V
VCBO
Collector-Base Voltage
(IC=-1
A, IB=0)
-20
---
V
VEBO
Emitter-Base Voltage
(IE=-50
A, IC=0)
-6.0
---
V
ICBO
Collector cut-off Current
(VCB=-20V, IE=0)
---
-0.1
A
IEBO
Emitter cut-off Current
(VEB=-5V, IC=0)
---
-0.1
A
hFE
DC current gain
(VCE=-2V, IC=-0.1A)
120
---
390
---
VCE(sat)
Collector-Emitter Saturation Voltage
(IC=-2A, IB=-0.1A)
---
-0.82
V
fT
Transition Frequency
(VCE=2.0Vdc, IC=0.5Adc)
200
---
MHz
CLASSIFICATION OF hFE
Rank
Q
R
Range
120-170
180-390
Marking
1815Q
1815R
omponents
20736 Marilla
Street Chatsworth
!"#
$% !"#
MCC
www.mccsemi.com
Revision: 2
2007/03/02
TM
Micro Commercial Components
TO-92S
AE
B
C
D
G
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.16
4.00
B
.12
3.00
C
.59
---
15.00
---
D
.02
0.45
E
.08
2.00
G
.20
5.00
1
2
3
1.EMITTER
3.BASE
2.COLLECTOR
2SA1585S-Q
2SA1585S-R
相关PDF资料
PDF描述
2SA1585STP/P 2000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SA1586-O 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SA1586 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SA1586-GR 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SA1587BLTE85L 100 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR
相关代理商/技术参数
参数描述
2SA1585STPQ 功能描述:两极晶体管 - BJT PNP 20V 3A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
2SA1585STPR 功能描述:两极晶体管 - BJT PNP 20V 3A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
2SA1586 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR
2SA1586-GR(T5L,F,T 功能描述:两极晶体管 - BJT -150mA -50V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
2SA1586-GR(T5LHITF 制造商:Toshiba America Electronic Components 功能描述: