参数资料
型号: 2SA1586-GR
元件分类: 小信号晶体管
英文描述: 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封装: 2-2E1A, SC-70, 3 PIN
文件页数: 1/3页
文件大小: 230K
代理商: 2SA1586-GR
2SA1586
2003-03-27
1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1586
Audio Frequency General Purpose Amplifier Applications
High voltage and high current: VCEO = 50 V, IC = 150 mA (max)
Excellent hFE linearity: hFE (IC = 0.1 mA)/ hFE (IC = 2 mA)
= 0.95 (typ.)
High hFE: hFE = 70~400
Low noise: NF = 1dB (typ.), 10dB (max)
Complementary to 2SC4116
Small package
Maximum Ratings (Ta
==== 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
50
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
150
mA
Base current
IB
30
mA
Collector power dissipation
PC
100
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
55~125
°C
Electrical Characteristics (Ta
==== 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 50 V, IE = 0
0.1
A
Emitter cut-off current
IEBO
VEB = 5 V, IC = 0
0.1
A
DC current gain
hFE
(Note)
VCE = 6 V, IC = 2 mA
70
400
Collector-emitter saturation voltage
VCE (sat)
IC = 100 mA, IB = 10 mA
0.1
0.3
V
Transition frequency
fT
VCE = 10 V, IC = 1 mA
80
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
4
7
pF
Noise figure
NF
VCE = 6 V, IC = 0.1 mA, f = 1 kHz,
Rg
= 10 k
1.0
10
dB
Note: hFE classification O (O): 70~140, Y (Y): 120~240, GR (G): 200~400
( ) marking symbol
Marking
Unit: mm
JEDEC
JEITA
SC-70
TOSHIBA
2-2E1A
Weight: 0.006 g (typ.)
相关PDF资料
PDF描述
2SA1587-GR 100 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SA1587 100 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SA1587-BL 100 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SA1587 100 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SA1587-BL 100 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR
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