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参数资料
| 型号： | 2SA1615-Z |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 10000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 文件页数： | 1/5页 |
| 文件大小： | 169K |
| 代理商： | 2SA1615-Z |
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SILICON POWER TRANSISTOR
2SA1615,1615-Z
PNP SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
DATA SHEET
Document No. D16119EJ2V0DS00 (2nd edition)
Date Published June 2006 NS CP(K)
Printed in Japan
2002
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
DESCRIPTION
The 2SA1615 and 1615-Z are available for the large current control in small dimension due to the low saturation and are
ideal for high-efficiency DC/DC converters due to the fast switching speed.
FEATURES
Large current capacity:
IC(DC) =
10 A, IC(pulse) = 15 A
High hFE and low collector saturation voltage:
hFE = 200 MIN. (VCE =
2.0 V, IC = 0.5 A)
VCE(sat)
≤ 0.25 V (IC = 4.0 A, IB = 0.05 A)
ABSOLUTE MAXIMUM RATINGS (TA = 25
°C)
Collector to base voltage
VCBO
30
V
Collector to emitter voltage
VCEO
20
V
Emitter to base voltage
VEBO
10
V
Collector current (DC)
IC(DC)
10
A
Collector current (pulse)
Note 1
IC(pulse)
15
A
Base current (DC)
IB(DC)
0.5
A
Total power dissipation
Note 2
PT (TA = 25
°C)
1.0
W
Total power dissipation
PT (TC = 25
°C)
15
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Notes 1. PW
≤ 10 ms, duty cycle ≤ 50%
2. Printing board mounted
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| 2SA1615-L | 10000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SA1615-ZT1L | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SA1617 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR SC-59-55V -.1A .15W EBC |
| 2SA1618 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SA1618-GR | 功能描述:两极晶体管 - BJT INCORRECT MOUSER P/N RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SA1618-GR(TE85L,F | 功能描述:两极晶体管 - BJT -150mA -50V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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