参数资料
型号: 2SA1618
元件分类: 小信号晶体管
英文描述: 150 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR
封装: SMV, 2-3L1A, 5 PIN
文件页数: 1/3页
文件大小: 132K
代理商: 2SA1618
2SA1618
2003-03-27
1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1618
Audio Frequency General Purpose Amplifier Applications
Small package (dual type)
High voltage and high current: VCEO = 50 V, IC = 150 mA (max)
High hFE: hFE = 120~400
Excellent hFE linearity: hFE (IC = 0.1 mA)/ hFE (IC = 2 mA)
= 0.95 (typ.)
Complementary to 2SC4207
Maximum Ratings (Ta
==== 25°C) (Q1, Q2 common)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
-50
V
Collector-emitter voltage
VCEO
-50
V
Emitter-base voltage
VEBO
-5
V
Collector current
IC
-150
mA
Base current
IB
-30
mA
Collector power dissipation
PC
(Note 1)
300
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
-55~125
°C
Note 1: Total rating
Marking
Equivalent Circuit (top view)
Unit: mm
JEDEC
JEITA
TOSHIBA
2-3L1A
Weight: 0.014 g (typ.)
相关PDF资料
PDF描述
2SA1625M-AZ 500 mA, 400 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
2SA1625 500 mA, 400 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
2SA1625L 500 mA, 400 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
2SA1625K-AZ 500 mA, 400 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
2SA1625K 500 mA, 400 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
相关代理商/技术参数
参数描述
2SA1618-GR 功能描述:两极晶体管 - BJT INCORRECT MOUSER P/N RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
2SA1618-GR(TE85L,F 功能描述:两极晶体管 - BJT -150mA -50V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
2SA1618-GR(TE85L,F) 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR PNP SMV
2SA1618-Y 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR
2SA1618-Y(TE85L,F) 制造商:Toshiba 功能描述:PNP