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参数资料
| 型号： | 2SA1619AQ |
| 厂商： | PANASONIC CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 500 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封装： | ROHS COMPLIANT, TO-92NL-A1, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 250K |
| 代理商： | 2SA1619AQ |
Transistors
1
Publication date: March 2003
SJC00024BED
2SA1619, 2SA1619A
Silicon PNP epitaxial planar type
For low-frequency power amplification and driver amplification
Complementary to 2SC4208 and 2SC4208A
■ Features
Allowing supply with the radial taping and automatic insertion
possible
■ Absolute Maximum Ratings T
a
= 25°C
■ Electrical Characteristics T
a
= 25°C ± 3°C
2.3
±
0.2
5.0±0.2
0.7±0.1
4.0±0.2
8.0
±
0.2
0.7
±
0.2
13.5
±
0.5
2.54±0.15
(1.27)
0.45
+0.2
–0.1
0.45
+0.15
–0.1
13
2
Unit: mm
1: Emitter
2: Collector
3: Base
TO-92NL-A1 Package
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
Q
R
S
hFE1
80 to 170
120 to 240
170 to 340
Parameter
Symbol
Rating
Unit
Collector-base voltage
2SA1619
VCBO
30
V
(Emitter open)
2SA1619A
60
Collector-emitter voltage 2SA1619
VCEO
25
V
(Base open)
2SA1619A
50
Emitter-base voltage (Collector open)
VEBO
5V
Collector current
IC
0.5
A
Peak collector current
ICP
1A
Collector power dissipation
PC
1W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage
2SA1619
VCBO
IC = 10 A, IE = 0
30
V
(Emitter open)
2SA1619A
60
Collector-emitter voltage
2SA1619
VCEO
IC = 10 mA, IB = 0
25
V
(Base open)
2SA1619A
50
Emitter-base voltage (Collector open)
VEBO
IE
= 10 A, I
C
= 0
5V
Collector-base cutoff current (Emitter open)
ICBO
VCB = 20 V, IE = 0
0.1
A
Forward current transfer ratio *
1
hFE1 *
2
VCE = 10 V, IC = 150 mA
85
160
340
hFE2
VCE
= 10 V, I
C
= 500 mA
40
90
Collector-emitter saturation voltage *
1
VCE(sat)
IC = 300 mA, IB = 30 mA
0.35 0.60
V
Base-emitter saturation voltage *
1
VBE(sat)
IC = 300 mA, IB = 30 mA
1.1
1.5
V
Transition frequency
fT
VCB
= 10 V, I
E
= 50 mA, f = 200 MHz
200
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
6
15
pF
(Common base, input open circuited)
This product complies with the RoHS Directive (EU 2002/95/EC).
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
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相关代理商/技术参数 |
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|---|---|
| 2SA1619ARA | 功能描述:TRANS PNP 50VCEO .5A TO-92NL RoHS:否 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)（最大）:1A 电压 - 集电极发射极击穿（最大）:30V Ib、Ic条件下的Vce饱和度（最大）:200mV @ 100mA，1A 电流 - 集电极截止（最大）:100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR |
| 2SA1619ASA | 功能描述:TRANS PNP 50VCEO .5A TO-92NL RoHS:否 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)（最大）:1A 电压 - 集电极发射极击穿（最大）:30V Ib、Ic条件下的Vce饱和度（最大）:200mV @ 100mA，1A 电流 - 集电极截止（最大）:100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR |
| 2SA1621 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR SC-59-30V .8A .2W SURFACE MOUNT |
| 2SA1621-Y(TE85L,F) | 制造商:Toshiba 功能描述:PNP 制造商:Toshiba 功能描述:PNP Cut Tape |
| 2SA1624 | 制造商:Distributed By MCM 功能描述:SUB ONLY SANYO TRANSISTOR TO-9 -250V -.1A .5WECB |
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