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参数资料
| 型号： | 2SA1627AG-M-T6C-K |
| 厂商： | UNISONIC TECHNOLOGIES CO LTD |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1000 mA, 600 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-126 |
| 封装： | HALOGEN FREE, TO-126C, 3 PIN |
| 文件页数： | 2/4页 |
| 文件大小： | 175K |
| 代理商： | 2SA1627AG-M-T6C-K |
2SA1627A
Preliminary PNP EPITAXIAL SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 4
www.unisonic.com.tw
QW-R217-004.B
ABSOLUTE MAXIMUM RATINGS (TA=25°C)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
-600
V
Collector-Emitter Voltage
VCEO
-600
V
Emitter-Base Voltage
VEBO
-7.0
V
Collector Power Dissipation
PC
1.0
W
Collector Current (DC)
IC
-1.0
A
Collector Current (Pulse)
ICP (Note 1)
-2.0
A
Junction Temperature
TJ
150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
1. PW≦10ms, Duty Cycle≦50%
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
Collector Cut-Off Current
ICBO
VCB= -600V, IE=0
-10
A
Emitter Cut-Off Current
IEBO
VEB= -7.0V, IC=0
-10
A
DC Current Gain
hFE1 (Note 2) VCE= -5.0V, IC= -0.1A
30
58
120
DC Current Gain
hFE2 (Note 2) VCE= -5.0V, IC= -0.5A
4
19
Collector-Emitter Saturation Voltage
VCE(sat)
(Note 2)
IC= -0.3A, IB= -0.06A
-0.28 -1.5
V
Base-Emitter Saturation Voltage
VBE(sat)
(Note 2)
IC= -0.3A, IB= -0.06A
-0.85 -1.2
V
Gain Bandwidth Product
fT
VCE= -10V, IE=0.1A
10
28
MHz
Output Capacitance
Cob
VCB= -10V, IE=0, f=1.0MHz
42
50
pF
Turn-On Time
ton
0.1
0.5
s
Storage Time
tstg
3.5
5.0
s
Fall Time
tf
IC=-0.5A, RL=500,
IB1= -IB2= -0.1A, VCC =-250V
0.08 0.5
s
Note: 2. Pulsed PW≦350s,Duty Cycle≦2%
CLASSIFICATION OF hFE1
RANK
M
L
K
RANGE
30-60
40-80
60-120
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相关代理商/技术参数 |
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|---|---|
| 2SA1627-K-AZ | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SA1633 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
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| 2SA1645-K-AZ | 制造商:Renesas Electronics Corporation 功能描述: |
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