- 您现在的位置：买卖IC网 > PDF目录41458 > 2SA1647-L-Z 5000 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-252AA PDF资料下载
参数资料
| 型号： | 2SA1647-L-Z |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 5000 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-252AA |
| 封装： | MP-3Z, 3 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 161K |
| 代理商： | 2SA1647-L-Z |
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D14839EJ4V0DS00 (4th edition)
Date Published August 2004 NS CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SA1647,1647-Z
PNP SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
DATA SHEET
c
2002
The mark
shows major revised points.
The 2SA1647 is a mold power transistor developed for high-
speed switching and features a very low collector-to-emitter
saturation voltage.
This transistor is ideal for use in switching regulators, DC/DC
converters, motor drivers, solenoid drivers, and other low-voltage
power supply devices, as well as for high-current switching.
FEATURES
Available for high-current control in small dimension
Z type is a lead processed product and is deal for mounting a
hybrid IC.
Low collector saturation voltage:
VCE(sat)1 =
0.3 V MAX. (IC = 3.0 A)
Fast switching speed:
tf = 0.4
s MAX. (IC = 3.0 A)
High DC current gain and excellent linearity
ABSOLUTE MAXIMUM RATINGS (TA = 25
°C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
150
V
Collector to emitter voltage
VCEO
100
V
Base to emitter voltage
VEBO
7.0
V
Collector current (DC)
IC(DC)
5.0
A
Collector current (pulse)
IC(pulse)
Note 1
10
A
Base current (DC)
IB(DC)
2.5
A
Total power dissipation (Tc = 25
°C)
PT
18
W
Total power dissipation (TA = 25
°C)
PT
1.0
Note 2, 2.0Note 3
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
PACKAGE DRAWINGS (Unit: mm)
2
13
6.5 ±0.2
5.0 ±0.2
4
1.5
0.1
+0.2
5.5
±0.2
7.0
MIN.
13.7
MIN.
2.3
0.75
0.5 ±0.1
2.3 ±0.2
1.6
±0.2
1.1 ±0.2
0.5 0.1
+0.2
0.5 0.1
+0.2
12
3
4
6.5±0.2
5.0±0.2
4.3
MAX.
0.8
2.3 2.3
0.9
MAX.
5.5±0.2
10.0
MAX.
2.0 MIN.
1.5-
0.1
+0.2
2.3±0.2
0.5±0.1
0.8
MAX.
0.8
1.0
MIN.
1.8TYP.
0.7
1.1±0.2
ELECTRODE CONNECTION
1. Base
2. Collector
3. Emitter
4. Collector Fin
TO-251 (MP-3)
TO-252 (MP-3Z)
Notes 1. PW
≤ 10 ms, Duty Cycle ≤ 50%
2. Printing board mounted
3. 7.5 mm
2
× 0.7 mm ceramic board mounted
相关PDF资料 |
PDF描述 |
|---|---|
| 2SA1647-M | 5000 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-251AA |
| 2SA1647-L | 5000 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-251AA |
| 2SA1647-K-Z | 5000 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-252AA |
| 2SA1647-ZL | 5000 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-252AA |
| 2SA1647-ZK | 5000 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-252AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SA1647-Z-AZ | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:Trans GP BJT PNP 100V 5A 3-Pin(2+Tab) TO-252 |
| 2SA1647-Z-AZ-K | 制造商:Renesas Electronics 功能描述:PNP |
| 2SA1648-AZ | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:PNP TRANSISTOR,60V,5.0A,TO-251 制造商:Renesas 功能描述:Trans GP BJT PNP 60V 5A 3-Pin(3+Tab) TO-251 |
| 2SA1648-AZ(L) | 制造商:Renesas Electronics 功能描述:PNP 制造商:Renesas Electronics 功能描述:PNP Bulk |
| 2SA1648-AZ-K | 制造商:Renesas Electronics 功能描述:Bulk |
发布紧急采购，3分钟左右您将得到回复。