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参数资料
| 型号： | 2SA1647-Z |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 5000 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-252AA |
| 封装： | TO-252, MP-3Z, 3 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 234K |
| 代理商： | 2SA1647-Z |
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SILICON POWER TRANSISTOR
2SA1647,1647-Z
PNP SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
DATA SHEET
Document No. D14839EJ5V0DS00 (5th edition)
Date Published June 2006 NS CP(K)
Printed in Japan
2002
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
DESCRIPTION
The 2SA1647 is a mold power transistor developed for high-speed
switching and features a very low collector-to-emitter saturation
voltage.
This transistor is ideal for use in switching regulators, DC/DC
converters, motor drivers, solenoid drivers, and other low-voltage
power supply devices, as well as for high-current switching.
FEATURES
Available for high-current control in small dimension
Z type is a lead processed product and is deal for mounting a
hybrid IC.
Low collector saturation voltage:
VCE(sat)1 =
0.3 V MAX. (IC = 3.0 A)
Fast switching speed:
tf = 0.4
μs MAX. (IC = 3.0 A)
High DC current gain and excellent linearity
ABSOLUTE MAXIMUM RATINGS (TA = 25
°C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
150
V
Collector to emitter voltage
VCEO
100
V
Base to emitter voltage
VEBO
7.0
V
Collector current (DC)
IC(DC)
5.0
A
Collector current (pulse)
IC(pulse)
Note 1
10
A
Base current (DC)
IB(DC)
2.5
A
Total power dissipation (Tc = 25
°C)
PT
18
W
Total power dissipation (TA = 25
°C)
PT
1.0
Note 2, 2.0Note 3
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Notes 1. PW
≤ 10 ms, Duty Cycle ≤ 50%
2. Printing board mounted
3. 7.5 cm
2
× 0.7 mm ceramic board mounted
PACKAGE DRAWINGS (Unit: mm)
2
13
6.5 ±0.2
5.0 ±0.2
4
1.5
0.1
+0.2
5.5
±0.2
7.0
MIN.
13.7
MIN.
2.3
0.75
0.5 ±0.1
2.3 ±0.2
1.6
±0.2
1.1 ±0.2
0.5 0.1
+0.2
0.5 0.1
+0.2
12 3
4
6.5 ±0.2
4.4 ±0.2
5.0 ±0.2
0.5 ±0.1
2
2.3 ±0.3
5.6
±0.3
9.5
±0.5
2.5
±0.5
1.0
±0.5
5.5
±0.2
1.5
0.1
+0.2
2.3 ±0.2
0.5 ±0.1
Note
0.4
MIN.
0.5TYP.
0.15 ±0.15
TO-251 (MP-3)
TO-252 (MP-3Z)
ELECTRODE CONNECTION
1. Base
2. Collector
3. Emitter
4. Collector Fin
Note The depth of notch at the top of the fin is
from 0 to 0.2 mm.
<R>
相关PDF资料 |
PDF描述 |
|---|---|
| 2SA1647-ZM | 5000 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-252AA |
| 2SA1647K | 5000 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-251AA |
| 2SA1647K | 5000 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-251AA |
| 2SA1647-ZL | 5000 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-252AA |
| 2SA1650-K-AZ | 5 A, 100 V, PNP, Si, POWER TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SA1647-Z-AZ | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:Trans GP BJT PNP 100V 5A 3-Pin(2+Tab) TO-252 |
| 2SA1647-Z-AZ-K | 制造商:Renesas Electronics 功能描述:PNP |
| 2SA1648-AZ | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:PNP TRANSISTOR,60V,5.0A,TO-251 制造商:Renesas 功能描述:Trans GP BJT PNP 60V 5A 3-Pin(3+Tab) TO-251 |
| 2SA1648-AZ(L) | 制造商:Renesas Electronics 功能描述:PNP 制造商:Renesas Electronics 功能描述:PNP Bulk |
| 2SA1648-AZ-K | 制造商:Renesas Electronics 功能描述:Bulk |
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