参数资料
型号: 2SA1647-ZL
元件分类: 小信号晶体管
英文描述: 5000 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-252AA
封装: TO-252, MP-3Z, 3 PIN
文件页数: 4/7页
文件大小: 0K
代理商: 2SA1647-ZL
Data Sheet D14839EJ5V0DS
2
2SA1647,1647-Z
ELECTRICAL CHARACTERISTICS (TA = 25
°C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector to emitter voltage
VCEO(SUS)
IC =
2.5 A, IB = 0.25 A, L = 1 mH
100
V
Collector to emitter voltage
VCEX(SUS)
IC =
2.5 A, IB1 = IB2 = 0.25 A,
VBE(OFF) = 1.5 V, L = 180
μH, clamped
100
V
Collector cutoff current
ICBO
VCB =
100 V, IE = 0 A
10
μA
Collector cutoff current
ICER
VCE =
100 V, RBE = 50 Ω, TA = 125°C
1.0
mA
Collector cutoff current
ICEX1
VCE =
100 V, VBE(OFF) = 1.5 V
10
μA
Collector cutoff current
ICEX2
VCE =
100 V, VBE(OFF) = 1.5 V,
TA = 125
°C
1.0
mA
Emitter cutoff current
IEBO
VEB(OFF) =
5.0 V, IC = 0 A
10
μA
DC current gain
hFE1
Note
VCE =
2.0 V, IC = 0.5 A
100
DC current gain
hFE2
Note
VCE =
2.0 V, IC = 1.0 A
100
400
DC current gain
hFE3
Note
VCE =
2.0 V, IC = 3.0 A
60
Collector saturation voltage
VCE(sat)1
Note
IC =
3.0 A, IB = 0.15 A
0.3
V
Collector saturation voltage
VCE(sat)2
Note
IC =
4.0 A, IB = 0.2 A
0.5
V
Base saturation voltage
VBE(sat)1
Note
IC =
3.0 A, IB = 0.15 A
1.2
V
Base saturation voltage
VBE(sat)2
Note
IC =
4.0 A, IB = 0.2 A
1.5
V
Collector capacitance
Cob
VCB =
10 V, IE = 0, f = 1.0 MHz
110
pF
Gain bandwidth product
fT
VCE =
10 V, IC = 0.5 A
90
MHz
Turn-on time
ton
0.3
μs
Storage time
tstg
1.5
μs
Fall time
tf
IC =
3.0 A, RL = 17 Ω,
IB1 =
IB2 = 0.15 A, VCC 50 V
Refer to SWITCHING TIME TEST
CIRCUIT.
0.4
μs
Note Pulse test PW
≤ 350
μs, Duty Cycle ≤ 2%/Pulsed
hFE CLASSIFICATION
Marking
M
L
K
hFE2
100 to 200
150 to 300
200 to 400
SWITCHING TIME TEST CIRCUIT
VIN
PW
50
Duty Cycle
≤ 2%
VBB
5 V
VCC
50 V
10%
90%
RL = 17
Ω
IB1
IC
IB2
IB1
IC
ton
tstg tf
TUT
IB2
s
μ
Base current
waveform
Collector current
waveform
相关PDF资料
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