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参数资料
| 型号： | 2SA1649-ZK |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 10000 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-252AA |
| 封装： | MP-3Z, 3 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 204K |
| 代理商： | 2SA1649-ZK |
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SILICON POWER TRANSISTOR
2SA1649,1649-Z
PNP SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
DATA SHEET
Document No. D15588EJ3V0DS00 (3rd edition)
Date Published June 2006 NS CP(K)
Printed in Japan
2002
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
DESCRIPTION
The 2SA1649 is a mold power transistor developed for high-speed
switching and features a very low collector-to-emitter saturation
voltage.
This transistor is ideal for use in switching regulators, DC/DC
converters, motor drivers, solenoid drivers, and other low-voltage
power supply devices, as well as for high-current switching.
FEATURES
Available for high-current control in small dimension
Z type is a lead processed product and is deal for mounting a
hybrid IC.
Mold package that does not require an insulating board or
insulation bushing
Low collector saturation voltage:
VCE(sat) =
0.3 V MAX. (IC = 3 A)
Fast switching speed:
tf = 0.3
μs MAX. (IC = 3 A)
High DC current amplifiers and excellent linearity
ABSOLUTE MAXIMUM RATINGS (Ta = 25
°C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
40
V
Collector to emitter voltage
VCEO
30
V
Emitter to base voltage
VEBO
7.0
V
Collector current (DC)
IC(DC)
10
A
Collector current (pulse)
IC(pulse)
Note 1
20
A
Base current (DC)
IB(DC)
3.5
A
Total power dissipation
PT (Tc = 25
°C)
15
W
Total power dissipation
PT (Ta = 25
°C) 1.0
Note 2, 2.0 Note 3
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Notes 1. PW
≤ 300 ms, Duty Cycle ≤ 10%
2. Printing board mounted
3. 7.5 cm
2 × 0.7 mm ceramic board mounted
PACKAGE DRAWINGS (Unit: mm)
2
13
6.5 ±0.2
5.0 ±0.2
4
1.5
0.1
+0.2
5.5
±0.2
7.0
MIN.
13.7
MIN.
2.3
0.75
0.5 ±0.1
2.3 ±0.2
1.6
±0.2
1.1 ±0.2
0.5 0.1
+0.2
0.5 0.1
+0.2
12 3
4
6.5 ±0.2
4.4 ±0.2
5.0 ±0.2
0.5 ±0.1
5.6
±0.3
9.5
±0.5
2.5
±0.5
1.0
±0.5
1.5
0.1
+0.2
2.3 ±0.2
0.5 ±0.1
Note
0.4
MIN.
0.5
TYP.
0.15 ±0.15
2.3 ±0.3
5.5
±0.2
Note The depth of notch at the top of the fin is
from 0 to 0.2 mm.
<R>
ELECTRODE CONNECTION
1. Base
2. Collector
3. Emitter
4. Collector Fin
TO-251 (MP-3)
TO-252 (MP-3Z)
<R>
相关PDF资料 |
PDF描述 |
|---|---|
| 2SA1649-K | 10000 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-251AA |
| 2SA1649-M | 10000 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-251AA |
| 2SA1650-M | 5 A, 100 V, PNP, Si, POWER TRANSISTOR |
| 2SA1650-L | 5 A, 100 V, PNP, Si, POWER TRANSISTOR |
| 2SA1650 | 5 A, 100 V, PNP, Si, POWER TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SA1650-K(AZ) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SA1650-L(AZ) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SA1652-K(AZ) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SA1652-L(AZ) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SA1656 | 制造商:Distributed By MCM 功能描述:SUB ONLY SANYO TRANSISTOR SPA-50V -.1A .3W ECB |
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