参数资料
型号: 2SA1650-M-AZ
元件分类: 功率晶体管
英文描述: 5 A, 100 V, PNP, Si, POWER TRANSISTOR
文件页数: 2/6页
文件大小: 148K
代理商: 2SA1650-M-AZ
Data Sheet D16122EJ1V0DS
2
2SA1650
ELECTRICAL CHARACTERISTICS (Ta = 25
°°°°C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
ICBO
VCB =
100 V, IE = 0
10
A
Emitter cutoff current
IEBO
VEB =
5 V, IC = 0
10
A
DC current gain
hFE1*
VCE =
2 V, IC = 0.5 A
100
DC current gain
hFE2*
VCE =
2 V, IC = 1 A
100
400
DC current gain
hFE3*
VCE =
2 V, IC = 3 A
60
Collector saturation voltage
VCE(sat)1*
IC =
3 A, IB = 0.15 A
0.3
V
Collector saturation voltage
VCE(sat)2*
IC =
4 A, IB = 0.2 A
0.5
V
Base saturation voltage
VBE(sat)1*
IC =
3 A, IB = 0.15 A
1.2
V
Base saturation voltage
VBE(sat)2*
IC =
4 A, IB = 0.2 A
1.5
V
Gain bandwidth product
fT
VCE =
10 V, IC = 0.5 A
150
MHz
Collector capacitance
Cob
VCB =
10 V, IE = 0, f = 1 MHz
130
pF
Turn-on time
ton
0.3
s
Storage time
tstg
1.5
s
Fall time
tf
IC =
3 A, IB1 = IB2 = 0.15 A,
RL = 10
, VCC = 50 V
Refer to the test circuit.
0.4
s
* Pulse test PW
≤ 350
s, duty cycle ≤ 2%
hFE CLASSIFICATION
Marking
M
L
K
hFE2
100 to 200
150 to 300
200 to 400
SWITCHING TIME TEST CIRCUIT
Base current
waveform
Collector current
waveform
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