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| 型号： | 2SA1681 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 2000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | LEAD FREE, 2-5K1A, PW-MINI, SC-62, 3 PIN |
| 文件页数： | 1/2页 |
| 文件大小： | 152K |
| 代理商： | 2SA1681 |
2SA1681
2004-07-07
1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1681
Power Amplifier Applications
Power Switching Applications
Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A)
High speed switching time: tstg = 300 ns (typ.)
Small flat package
PC = 1.0 to 2.0 W (mounted on a ceramic substrate)
Complementary to 2SC4409
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
60
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
6
V
Collector current
IC
2
A
Base current
IB
0.2
A
PC
500
Collector power dissipation
PC
(Note)
1000
mW
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Mounted on a ceramic substrate (250 mm
2 × 0.8 t)
Unit: mm
PW-MINI
JEDEC
―
JEITA
SC-62
TOSHIBA
2-5K1A
Weight: 0.05 g (typ.)
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| 2SB1392B | 4 A, 60 V, PNP, Si, POWER TRANSISTOR |
| 2SB1392C | 4 A, 60 V, PNP, Si, POWER TRANSISTOR |
| 2SC3075 | 800 mA, 400 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SC4685 | 5 A, 20 V, NPN, Si, POWER TRANSISTOR |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SA1681(TE12L,F) | 功能描述:两极晶体管 - BJT PNP 50V 2A Transistor RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SA1682-4-TB-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:TRANSISTOR PNP 300V 0.05A SOT23 |
| 2SA1685-4-TL-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:TRANS PNP 20V 0.15A SOT323 |
| 2SA1687-6-TL-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:Cut Tape 制造商:SANYO Semiconductor Co Ltd 功能描述:TRANS PNP 50V 0.15A SOT323 |
| 2SA1689 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-92-300V -.05A .6W ECB |
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