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参数资料
| 型号： | 2SA1740L-D-AB3-R |
| 厂商： | UNISONIC TECHNOLOGIES CO LTD |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 200 mA, 400 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | LEAD FREE PACKAGE-3 |
| 文件页数： | 2/5页 |
| 文件大小： | 155K |
| 代理商： | 2SA1740L-D-AB3-R |
2SA1740
PNP SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 5
www.unisonic.com.tw
QW-R208-026,B
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
-400
V
Collector-Emitter Voltage
VCEO
-400
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current
IC
-200
mA
Collector Current (PULSE)
ICP
-400
mA
Collector Power Dissipation
PC
0.5
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Collect-Base Breakdown Voltage
BVCBO
IC= -10μA,IE=0
-400
V
Collect-Emitter Breakdown Voltage
BVCEO
IC= -1mA,IB=0, RBE=∞
-400
V
Emitter-Base Breakdown Voltage
BVEBO
IE= -10μA,IC=0
-5
V
Collector Cutoff Current
ICBO
VCB= -300V,IE=0
-0.1
μA
Emitter Cutoff Current
IEBO
VEB= -4V,IC=0
-0.1
μA
DC Current Gain
hFE
VCE= -10V, Ic= -50mA
60
200
Collect-Emitter Saturation Voltage
VCE(SAT)
IC= -50mA,IB= -5mA
-0.8
V
Base-Emitter Saturation Voltage
VBE(SAT)
IC= -50mA,IB= -5mA
-1.0
V
Output Capacitance
COB
VCB=-30V, f=1MHz
5
pF
Reverse Transfer Capacitance
CRE
VCB =-30V,f=1MHz
4
pF
Gain-Bandwidth Product
fT
VCE= -30V,IC= -10mA
70
MHz
Turn-On Time
tON
See test circuit
0.25
μs
Turn-Off Time
tOFF
See test circuit
5.0
μs
CLASSIFICATION OF hFE
RANK
D
E
RANGE
60-120
100-200
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