参数资料
型号: 2SA1741-AZ
元件分类: 功率晶体管
英文描述: 5 A, 60 V, PNP, Si, POWER TRANSISTOR
文件页数: 1/6页
文件大小: 168K
代理商: 2SA1741-AZ
Document No. D16125EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SA1741
PNP SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
DATA SHEET
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
2002
The 2SA1741 is a power transistor developed for high-speed
switching and features a high hFE at low VCE(sat). This transistor is
ideal for use as a driver in DC/DC converters and actuators.
In addition, a small resin-molded insulation type package
contributes to high-density mounting and reduction of mounting
cost.
FEATURES
High hFE and low VCE(sat):
hFE
≥ 100 (VCE = 2 V, IC = 1 A)
VCE(sat)
≤ 0.3 V (IC = 3 A, IB = 0.15 A)
Full-mold package that does not require an insulating board or
bushing when mounting.
PACKAGE DRAWING (UNIT: mm)
Electrode Connection
1. Base
2. Collector
3. Emitter
.
ABSOLUTE MAXIMUM RATINGS (Ta = 25
°°°°C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
100
V
Collector to emitter voltage
VCEO
60
V
Emitter to base voltage
VEBO
7.0
V
Collector current (DC)
IC(DC)
5.0
A
Collector current (pulse)
IC(pulse)*
10
A
Base current (DC)
IB(DC)
2.5
A
Total power dissipation
PT (Tc = 25
°C)
25
W
Total power dissipation
PT (Ta = 25
°C)
2.0
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
*PW
≤ 300
s, duty cycle ≤ 50%
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相关代理商/技术参数
参数描述
2SA1741-AZK@ 制造商:Renesas Electronics 功能描述:PNP 制造商:Renesas Electronics 功能描述:PNP Bulk
2SA1741-AZ-L 制造商:Renesas Electronics 功能描述:PNP Bulk
2SA1741-K(AZ) 制造商:Renesas Electronics Corporation 功能描述:
2SA1741-L(AZ) 制造商:Renesas Electronics Corporation 功能描述:
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