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参数资料
| 型号： | 2SA1766 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 300 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-243 |
| 封装： | PCP, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 76K |
| 代理商： | 2SA1766 |
2SA1766
No.3182-1/4
Features
Adoption of FBET, MBIT processes.
High DC current gain (hFE=500 to 1200).
Large current capacity.
Low collector-to-emitter saturation voltage.
High VEBO.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
--30
V
Collector-to-Emitter Voltage
VCEO
--25
V
Emitter-to-Base Voltage
VEBO
--15
V
Collector Current
IC
--300
mA
Collector Current (Pulse)
ICP
--500
mA
Base Current
IB
--60
mA
Collector Dissipation
PC
Mounted on a ceramic board (250mm2
0.8mm)
1.3
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=--20V, IE=0A
--0.1
μA
Emitter Cutoff Current
IEBO
VEB=--10V, IC=0A
--0.1
μA
DC Current Gain
hFE1VCE=--5V, IC=--10mA
500
800
1200
hFE2VCE=--5V, IC=--200mA
200
Marking : AL
Continued on next page.
www.semiconductor-sanyo.com/network
Ordering number : EN3182C
33110LA TK IM / 91003TN (KT)/83098HA (KT)/1200MO/6279MO, TS
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer
's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer
's products or
equipment.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
SANYO Semiconductors
DATA SHEET
2SA1766
PNP Epitaxial Planar Silicon Transistor
High hFE, Low-Frequency
General-Purpose Amplifier Applications
相关PDF资料 |
PDF描述 |
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| 2SA1773C(TP) | 2000 mA, 400 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
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| 2SC4616C(TP) | 2000 mA, 400 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SA1767 | 制造商:Distributed By MCM 功能描述:SUB ONLY MATSUSHITA TRANSISTOR TO-92 -300V -.07A .75W ECB |
| 2SA17670QA | 功能描述:TRANS PNP 300VCEO 70MA TO-92 RoHS:是 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)（最大）:1A 电压 - 集电极发射极击穿（最大）:30V Ib、Ic条件下的Vce饱和度（最大）:200mV @ 100mA，1A 电流 - 集电极截止（最大）:100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR |
| 2SA1767Q | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SA1767-Q | 制造商:Panasonic Industrial Company 功能描述:SUB ONLY TRANSISTOR |
| 2SA1767QTA | 制造商:Panasonic Industrial Company 功能描述:SUB ONLY TRANSISTOR |
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