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参数资料
| 型号： | 2SA1777-E |
| 元件分类： | 功率晶体管 |
| 英文描述： | 0.3 A, 250 V, PNP, Si, POWER TRANSISTOR, TO-126 |
| 封装： | TO-126ML, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 153K |
| 代理商： | 2SA1777-E |
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP/NPN Epitaxial Planar Silicon Transistors
Ultrahigh-Definition CRT Display
Video Output Applications
Ordering number:ENN3644
2SA1777/2SC4623
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
93003TN (KT)/83198HA (KT)/41694TH (KOTO) 8-7036 No.3644 1/4
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( ) : 2SA1777
Specifications
Absolute Maximum Ratings at Ta = 25 C
Package Dimensions
unit:mm
2042B
[2SA1777/2SC4623]
Features
High fT : fT=400MHz (typ).
High breakdown voltage : VCEO 250V(min).
High current.
Small reverse transfer capacitance and excellent
high-frequnecy characteristic :
Cre=3.4pF (NPN), 4.2pF (PNP).
Complementary pair with the 2SA1777/2SC4623.
Adoption of FBET process.
C
Electrical Characteristics at Ta = 25 C
1 : Emitter
2 : Collector
3 : Base
SANYO : TO-126ML
Tc=25C
4.0
1.0
8.0
1.6
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0.75
1.5
7.5
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1.4
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15.5
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3.0
0.7
2.4
4.8
1.7
1
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* : The 2SA1777/2SC4623 are classified by 50mA hFE as follows :
Continued on next page.
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