参数资料
型号: 2SA1798
元件分类: 功率晶体管
英文描述: 8 A, 20 V, PNP, Si, POWER TRANSISTOR
封装: TO-126ML, 3 PIN
文件页数: 1/4页
文件大小: 39K
代理商: 2SA1798
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP Epitaxial Planar Silicon Transistors
20V/8A Switching Applications
Ordering number:ENN3709
2SA1798
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
80103TN (KT)/83198HA (KT)/5201MH (KOTO) No.3709–1/4
r
e
t
e
m
a
r
a
Pl
o
b
m
y
Ss
n
o
i
t
i
d
n
o
Cs
g
n
i
t
a
Rt
i
n
U
e
g
a
t
l
o
V
e
s
a
B
-
o
t
-
r
o
t
c
e
ll
o
CV
O
B
C
5
2
V
e
g
a
t
l
o
V
r
e
t
i
m
E
-
o
t
-
r
o
t
c
e
ll
o
CV
O
E
C
0
2
V
e
g
a
t
l
o
V
e
s
a
B
-
o
t
-
r
e
t
i
m
EV
O
B
E
5
V
t
n
e
r
u
C
r
o
t
c
e
ll
o
CIC
8
A
)
e
s
l
u
P
(
t
n
e
r
u
C
r
o
t
e
ll
o
CI P
C
2
1
A
t
n
e
r
u
C
e
s
a
BIB
5
.
1
A
n
o
i
t
a
p
i
s
i
D
r
o
t
c
e
ll
o
CPC
5
.
1W
0
1W
e
r
u
t
a
r
e
p
m
e
T
n
o
i
t
c
n
u
Jj
T
0
5
1
e
r
u
t
a
r
e
p
m
e
T
e
g
a
r
o
t
Sg
t
s
T
0
5
1
+
o
t
5
Specifications
Absolute Maximum Ratings at Ta = 25C
Package Dimensions
unit:mm
2042B
[2SA1798]
Features
Adoption of MBIT processes.
Low saturation voltage.
Fast switching speed.
Large current capacity.
C
Electrical Characteristics at Ta = 25C
1 : Emitter
2 : Collector
3 : Base
SANYO : TO-126ML
Tc=25C
r
e
t
e
m
a
r
a
Pl
o
b
m
y
Ss
n
o
i
t
i
d
n
o
C
s
g
n
i
t
a
R
t
i
n
U
n
i
mp
y
tx
a
m
t
n
e
r
u
C
f
o
t
u
C
r
o
t
c
e
ll
o
CI
O
B
C
V B
C
I
,
V
0
2
=
E 0
=1
A
t
n
e
r
u
C
f
o
t
u
C
r
e
t
i
m
EI
O
B
E
V B
E
I
,
V
4
=
C 0
=1
A
n
i
a
G
t
n
e
r
u
C
D
h E
F 1V E
C
I
,
V
2
=
C
A
m
0
5
=*
0
1*
0
4
h E
F 2V E
C
I
,
V
2
=
C
A
6
=0
6
t
c
u
d
o
r
P
h
t
d
i
w
d
n
a
B
-
n
i
a
GfT
V E
C
I
,
V
2
=
C
A
m
0
5
=0
0
2z
H
M
e
c
n
a
t
i
c
a
p
a
C
t
u
p
t
u
OC b
o
V B
C
z
H
M
1
=
f
,
V
0
1
=5
8F
p
Continued on next page.
4.0
1.0
8.0
1.6
0.8
0.75
1.5
7.5
3.0
1.4
11.0
15.5
3.3
3.0
0.7
2.4
4.8
1.7
1
23
相关PDF资料
PDF描述
2SA1798R 8 A, 20 V, PNP, Si, POWER TRANSISTOR
2SA1798T 8 A, 20 V, PNP, Si, POWER TRANSISTOR
2SA1815-3 VHF BAND, Si, PNP, RF SMALL SIGNAL TRANSISTOR, TO-236
2SA1815 VHF BAND, Si, PNP, RF SMALL SIGNAL TRANSISTOR, TO-236
2SA1815-5 VHF BAND, Si, PNP, RF SMALL SIGNAL TRANSISTOR, TO-236
相关代理商/技术参数
参数描述
2SA1804 制造商:Distributed By MCM 功能描述:-120V -8A 70W Bce Toshiba Transistor 2-16F1A
2SA1804-O 制造商:Toshiba America Electronic Components 功能描述:
2SA1804-R(F) 制造商:Toshiba America Electronic Components 功能描述:
2SA1805-O(F) 制造商:Toshiba 功能描述:PNP Bulk
2SA1806GRL 功能描述:TRANS PNP 15VCEO 50MA SSMINI-3 RoHS:是 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)(最大):1A 电压 - 集电极发射极击穿(最大):30V Ib、Ic条件下的Vce饱和度(最大):200mV @ 100mA,1A 电流 - 集电极截止(最大):100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA,5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3,SC-59,SOT-23-3 供应商设备封装:SOT-23-3(TO-236) 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR