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参数资料
| 型号： | 2SA1803 |
| 元件分类： | 功率晶体管 |
| 英文描述： | 6 A, 80 V, PNP, Si, POWER TRANSISTOR |
| 封装： | LEAD FREE, 2-16F1A, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 134K |
| 代理商： | 2SA1803 |
2SA1803
2006-11-09
1
TOSHIBA Transistor Silicon PNP Triple Diffused Type
2SA1803
Power Amplifier Applications
Complementary to 2SC4688
Recommended for 40-W high-fidelity audio frequency amplifier
output stage
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
80
V
Collector-emitter voltage
VCEO
80
V
Emitter-base voltage
VEBO
5
V
DC
IC
6
Collector current
Pulse
ICP
12
A
Base current
IB
0.6
A
Collector power dissipation
(Tc = 25°C)
PC
55
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-16F1A
Weight: 5.8 g (typ.)
相关PDF资料 |
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| 2SA1882-S | 1500 mA, 15 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SC4984 | 1.5 A, 15 V, NPN, Si, POWER TRANSISTOR |
| 2SC4984S | 1.5 A, 15 V, NPN, Si, POWER TRANSISTOR |
| 2SA1882U | 1.5 A, 15 V, PNP, Si, POWER TRANSISTOR |
| 2SC4984-T | 1500 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SA1804 | 制造商:Distributed By MCM 功能描述:-120V -8A 70W Bce Toshiba Transistor 2-16F1A |
| 2SA1804-O | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SA1804-R(F) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SA1805-O(F) | 制造商:Toshiba 功能描述:PNP Bulk |
| 2SA1806GRL | 功能描述:TRANS PNP 15VCEO 50MA SSMINI-3 RoHS:是 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)（最大）:1A 电压 - 集电极发射极击穿（最大）:30V Ib、Ic条件下的Vce饱和度（最大）:200mV @ 100mA，1A 电流 - 集电极截止（最大）:100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR |
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