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参数资料
| 型号： | 2SA1816S |
| 厂商： | PANASONIC CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 50 mA, 150 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | NS-B1, 3 PIN |
| 文件页数： | 1/2页 |
| 文件大小： | 155K |
| 代理商： | 2SA1816S |
160
Transistor
2SA1816(Tentative)
Silicon PNP epitaxial planer type
For low-frequency high breakdown voltage amplification
s Features
q
High collector to emitter voltage VCEO.
s Absolute Maximum Ratings (Ta=25C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
–150
–5
–100
–50
300
150
–55 ~ +150
Unit
V
mA
mW
C
s Electrical Characteristics (Ta=25C)
Parameter
Collector cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Noise voltage
Symbol
ICBO
VCEO
VEBO
hFE
*1
VCE(sat)
fT
Cob
NV
Conditions
VCB = –100V, IE = 0
IC = –100A, IB = 0
IE = –10A, IC = 0
VCE = –5V, IC = –10mA
IC = –30mA, IB = –3mA
VCB = –10V, IE = 10mA, f = 200MHz
VCB = –10V, IE = 0, f = 1MHz
VCE = –10V, IC = – 1mA, GV = 80dB
Rg = 100k, Function = FLAT
min
–150
–5
90
typ
200
150
max
–1
450
–1
5
Unit
A
V
MHz
pF
mV
Unit: mm
1:Emitter
2:Collector
3:Base
NS-B1 Package
4.0±0.2
0.75 max.
2.0±0.2
0.45
(2.5) (2.5)
0.7±0.1
23
1
+0.20
–0.10
0.45
+0.20
–0.10
7.6
3.0
±0.2
(0.8)
15.6
±0.5
*1h
FE Rank classification
Rank
Q
R
S
T
hFE
90 ~ 155
130 ~ 220
185 ~ 330
260 ~ 450
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Please
visit
following
URL
about
latest
information.
http://panasonic.co.jp/semicon/e-index.html
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