- 您现在的位置：买卖IC网 > PDF目录55785 > 2SA1832F 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR PDF资料下载
参数资料
| 型号： | 2SA1832F |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | ESM, 2-2HA1A, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 391K |
| 代理商： | 2SA1832F |
2SA1832F
2007-11-01
1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1832F
Audio Frequency General Purpose Amplifier Applications
High voltage and high current: VCEO = 50 V, IC = 150 mA (max)
Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA)
= 0.95 (typ.)
High hFE: hFE = 120~400
Complementary to 2SC4738F
Small package
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
50
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
150
mA
Base current
IB
30
mA
Collector power dissipation
PC
100
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 50 V, IE = 0
0.1
μA
Emitter cut-off current
IEBO
VEB = 5 V, IC = 0
0.1
μA
DC current gain
hFE
(Note)
VCE = 6 V, IB= 2 mA
120
400
Collector-emitter saturation voltage
VCE (sat)
IC = 100 mA, IB = 10 mA
0.1
0.3
V
Transition frequency
fT
VCE = 10 V, IC = 1 mA
80
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
4
7
pF
Note: hFE classification Y (Y): 120~240, GR (G): 200~400
( ) marking symbol
Marking
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-2HA1A
Weight: 2.3 mg (typ.)
相关PDF资料 |
PDF描述 |
|---|---|
| 2SA1843-M | 5 A, 60 V, PNP, Si, POWER TRANSISTOR |
| 2SA1860O | 14 A, 150 V, PNP, Si, POWER TRANSISTOR |
| 2SA1862F5TLN | 2000 mA, 400 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SA1899-O | 800 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SA1899 | 800 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SA1832F-GR(TPL3,F | 制造商:Toshiba 功能描述:PNP 制造商:Toshiba 功能描述:PNP Cut Tape |
| 2SA1832F-Y(TPL3,F) | 制造商:Toshiba 功能描述:PNP Cut Tape |
| 2SA1832-GR(T5L,F,T | 功能描述:两极晶体管 - BJT -150mA -0.3V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SA1832-GR(T5L,F,T) | 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR PNP SSM |
| 2SA1832-GR(TE85L,F | 制造商:Toshiba 功能描述:PNP |
发布紧急采购，3分钟左右您将得到回复。