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参数资料
| 型号： | 2SA1832FTY |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | 2-1B1A, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 150K |
| 代理商： | 2SA1832FTY |
2SA1832FT
2007-11-01
1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1832FT
Audio frequency General Purpose Amplifier Applications
High voltage: VCEO = 50 V
High current: IC = 150 mA (max)
High hFE: hFE = 120 to 400
Excellent hFE linearity
: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)
Complementary to 2SC4738F
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
50
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
150
mA
Base current
IB
30
mW
Collector power dissipation
PC
100
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
55 to 125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Marking
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 50 V, IE = 0
0.1
μA
Emitter cut-off current
IEBO
VEB = 5 V, IC = 0
0.1
μA
DC current gain
hFE
(Note)
VCE = 6 V, IB = 2 mA
120
400
Collector-emitter saturation voltage
VCE (sat)
IC = 100 mA, IB = 10 mA
―
0.1
0.3
V
Transition frequency
fT
VCE = 10 V, IC = 1 mA
80
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
4
7
pF
Note: hFE Classification
Y (Y): 120 to 140, GR (G): 200 to 400
( ) Marking symbol
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-1B1A
Type Name
S Y
hFE Rank
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SA1832F-Y(TPL3,F) | 制造商:Toshiba 功能描述:PNP Cut Tape |
| 2SA1832-GR(T5L,F,T | 功能描述:两极晶体管 - BJT -150mA -0.3V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SA1832-GR(T5L,F,T) | 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR PNP SSM |
| 2SA1832-GR(TE85L,F | 制造商:Toshiba 功能描述:PNP |
| 2SA1832-GR,LF | 功能描述:TRANS PNP 50V 0.15A SSM 制造商:toshiba semiconductor and storage 系列:- 包装:剪切带（CT） 零件状态:停产 晶体管类型:PNP 电流 - 集电极（Ic）（最大值）:150mA 电压 - 集射极击穿（最大值）:50V 不同?Ib，Ic 时的?Vce 饱和值（最大值）:300mV @ 10mA，100mA 电流 - 集电极截止（最大值）:100nA（ICBO） 不同?Ic，Vce?时的 DC 电流增益（hFE）（最小值）:200 @ 2mA，6V 功率 - 最大值:100mW 频率 - 跃迁:80MHz 安装类型:表面贴装 封装/外壳:SC-75，SOT-416 供应商器件封装:SSM 标准包装:1 |
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