- 您现在的位置：买卖IC网 > PDF目录31645 > 2SA1836-M6-A 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR PDF资料下载
参数资料
| 型号： | 2SA1836-M6-A |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 文件页数： | 1/4页 |
| 文件大小： | 37K |
| 代理商： | 2SA1836-M6-A |
2001
PNP SILICON EPITAXIAL TRANSISTOR
2SA1836
PNP SILICON EPITAXIAL TRANSISTOR
DATA SHEET
Document No.
D15615EJ1V0DS00 (1st edition)
Date Published
July 2001 NS CP(K)
Printed in Japan
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
DESCRIPTION
The 2SA1836 is PNP silicon epitaxial transistor.
FEATURES
High DC current gain: hFE2 = 200 TYP.
High voltage: VCEO = 50 V
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Collector to Base Voltage
VCBO
60
V
Collector to Emitter Voltage
VCEO
50
V
Emitter to Base Voltage
VEBO
5.0
V
Collector Current (DC)
IC(DC)
100
mA
Collector Current (pulse)
Note1
IC(pulse)
200
mA
Total Power Dissipation (TA = 25°C)
Note2
PT
200
mW
Junction Temperature
Tj
150
°C
Storage Temperature Range
Tstg
–55 to + 150
°C
Notes 1. PW
≤ 10 ms, Duty Cycle ≤ 50%
2. When mounted on ceramic substrate of 3.0 cm
2 x 0.64 mm
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
ICBO
VCB =
60 V, IE = 0
100
nA
Emitter Cut-off Current
IEBO
VEB =
5.0 V, IC = 0
100
nA
DC Current Gain
Note
hFE1
VCE =
6.0 V, IC = 0.1 mA
50
hFE2
VCE =
6.0 V, IC = 1.0 mA
90
200
600
Base to Emitter Voltage
Note
VBE
VCE =
6.0 V, IC = 1.0 mA
0.62
V
Collector Saturation Voltage
Note
VCE(sat)
IC =
100 mA, IB = 10 mA
0.18
0.3
V
Base Saturation Voltage
Note
VBE(sat)
IC =
100 mA, IB = 10 mA
0.86
1.0
V
Gain Bandwidth Product
fT
VCE =
6.0 V, IE = 10 mA
50
180
MHz
Output Capacitance
Cob
VCE =
6.0 V, IE = 0, f = 1.0 MHz
4.5
6.0
pF
Note Pulsed: PW
≤ 350
s, Duty Cycle ≤ 2%
hFE CLASSFICATION
Marking
M4
M5M6M7
hFE2
90 to 180
135 to 270
200 to 400
300 to 600
PACKAGE DRAWING (Unit: mm)
0.3 ± 0.05
1.6
±
0.1
0.8
±
0.1
2
0.2
+0.1
–0
0.5
1: Emitter
2: Base
3: Collector
0.5
1.0
1.6 ± 0.1
3
1
0.6
0.75 ± 0.05
0 to 0.1
0.1
+0.1
–0.05
相关PDF资料 |
PDF描述 |
|---|---|
| 2SA1836-M6 | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SA1836 | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SA1838-6-TL | Si, PNP, RF SMALL SIGNAL TRANSISTOR |
| 2SA1688-TL | 30 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SA1838-7 | Si, PNP, RF SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SA1836-T1-A | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:PNP Transistor,50V,0.1A,USM3 制造商:Renesas 功能描述:Trans GP BJT PNP 50V 0.1A 3-Pin SC-75 T/R |
| 2SA1837 | 功能描述:TRANS PNP -230V -1A TO220NIS RoHS:否 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)（最大）:1A 电压 - 集电极发射极击穿（最大）:30V Ib、Ic条件下的Vce饱和度（最大）:200mV @ 100mA，1A 电流 - 集电极截止（最大）:100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR |
| 2SA1837(F | 制造商:Toshiba America Electronic Components 功能描述:Trans GP BJT PNP 230V 1A 3-Pin(3+Tab) TO-220NIS |
| 2SA1837(F) | 制造商:Toshiba 功能描述:PNP -230V -1A 100 to 320 TO220NIS Bulk 制造商:Toshiba 功能描述:Trans GP BJT PNP 230V 1A 3-Pin(3+Tab) TO-220NIS |
| 2SA1837(F,M) | 功能描述:两极晶体管 - BJT PNP - 230V -1A 20W RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
发布紧急采购，3分钟左右您将得到回复。