- 您现在的位置：买卖IC网 > PDF目录33323 > 2SA1847-K-AZ 10 A, 100 V, PNP, Si, POWER TRANSISTOR PDF资料下载
参数资料
| 型号： | 2SA1847-K-AZ |
| 元件分类： | 功率晶体管 |
| 英文描述： | 10 A, 100 V, PNP, Si, POWER TRANSISTOR |
| 文件页数： | 1/6页 |
| 文件大小： | 142K |
| 代理商： | 2SA1847-K-AZ |
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
1998
Document No. D15593EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SA1847
PNP SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
DATA SHEET
2002
The 2SA1847 is a power transistor developed for high-speed switching and features a high hFE at low VCE(sat).
This transistor is ideal for use as a driver in DC/DC converters and actuators.
In addition, this transistor features a package that can be auto-mounted in radial taping specifications, thus
contributing to mounting cost reduction.
FEATURES
Auto-mount possible in radial taping specifications
Resin-molded insulation type package with power rating of 1.8 W in stand-alone conditions
High hFE and low VCE(sat):
VCE(sat) =
0.3 V MAX. @IC = 6.0 V, IB = 0.3 A
hFE
≥ 100
@VCE =
2.0 V, IC = 2.0 A
Fast switching speed
ABSOLUTE MAXIMUM RATINGS (Ta = 25
°°°°C)
Parameter
Symbol
Conditions
Ratings
Unit
Collector to base voltage
VCBO
150
V
Collector to emitter voltage
VCEO
100
V
Emitter to base voltage
VEBO
7.0
V
Collector current (DC)
IC(DC)
10
A
Collector current (pulse)
IC(pulse)
PW
≤ 300
s, duty cycle ≤ 2%
20
A
Base current (DC)
IB(DC)
6.0
A
Total power dissipation
PT
Ta = 25
°C
1.8
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
相关PDF资料 |
PDF描述 |
|---|---|
| 2SA1853E | 0.2 A, 200 V, PNP, Si, POWER TRANSISTOR |
| 2SC4827E | 0.2 A, 200 V, NPN, Si, POWER TRANSISTOR |
| 2SC4827F | 0.2 A, 200 V, NPN, Si, POWER TRANSISTOR |
| 2SC4827D | 0.2 A, 200 V, NPN, Si, POWER TRANSISTOR |
| 2SA1854T | 5 A, 20 V, PNP, Si, POWER TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SA1855S-AY | 制造商:SANYO 功能描述:PNP 50V 0.1A 140 to 280 FLP Bulk 制造商:SANYO Semiconductor Co Ltd 功能描述:TRANSISTOR PNP 50V 4A FLP 制造商:Sanyo 功能描述:0 |
| 2SA1859 | 制造商:Sanken Electric Co Ltd 功能描述:Trans GP BJT PNP 150V 2A 3-Pin (3+Tab) TO-220F Box 制造商:Sanken Electric Co Ltd 功能描述:Trans GP BJT PNP 150V 2A 3-Pin (3+Tab) TO-220F Bulk 制造商:Sanken Electric Co Ltd 功能描述:TRANS PNP 150V 2A TO220F |
| 2SA1859A | 制造商:Sanken Electric Co Ltd 功能描述:Trans GP BJT PNP 180V 2A 3-Pin (3+Tab) TO-220F Bulk 制造商:Sanken Electric Co Ltd 功能描述:TRANS PNP 180V 2A TO220F |
| 2SA1860 | 制造商:Sanken Electric Co Ltd 功能描述:Bulk 制造商:Sanken Electric Co Ltd 功能描述:TRANS PNP AUDIO/GP FM-100 TO-3PF |
| 2SA1862TLP | 功能描述:两极晶体管 - BJT PNP 400V 2A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
发布紧急采购，3分钟左右您将得到回复。