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参数资料
| 型号： | 2SA1847-K |
| 元件分类： | 功率晶体管 |
| 英文描述： | 10 A, 100 V, PNP, Si, POWER TRANSISTOR |
| 文件页数： | 4/8页 |
| 文件大小： | 259K |
| 代理商： | 2SA1847-K |
Data Sheet D15593EJ2V0DS
2
2SA1847
ELECTRICAL CHARACTERISTICS (Ta = 25
°°°°C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
ICBO
VCB =
100 V, IE = 0
10
A
Collector cutoff current
ICER
VCE =
100 V, REB = 50
Ta = 125
°C
1.0
mA
Collector cutoff current
ICEX1
VCE =
100 V, VBE(off) = 1.5 V
10
A
Collector cutoff current
ICEX2
VCE =
100 V, VBE(off) = 1.5 V
Ta = 125
°C
1.0
mA
Emitter cutoff current
IEBO
VEB =
5.0 V, IC = 0
10
A
DC current gain
hFE1*
VCE =
2.0 V, IC = 0.5 A
100
DC current gain
hFE2*
VCE =
2.0 V, IC = 2.0 A
100
400
DC current gain
hFE3*
VCE =
2.0 V, IC = 6.0 A
60
Collector saturation voltage
VCE(sat)1*
IC =
6.0 A, IB = 0.3 A
0.3
V
Collector saturation voltage
VCE(sat)2*
IC =
8.0 A, IB = 0.4 A
0.5
V
Base saturation voltage
VBE(sat)1*
IC =
6.0 A, IB = 0.3 A
1.2
V
Base saturation voltage
VBE(sat)2*
IC =
8.0 A, IB = 0.4 A
1.5
V
Gain bandwidth product
fT
VCE =
10 V, IC = 0.5 A
150
MHz
Collector capacitance
Cob
VCB =
10 V, IE = 0, f = 1 MHz
250
pF
Turn-on time
ton
0.3
s
Storage time
tstg
1.5
s
Fall time
tf
IC =
6.0 A
IB1 =
IB2 = 0.3 A
RL = 8.3
, VCC = 50 V
0.4
s
* Pulse test PW
≤ 350
s, duty cycle ≤ 2%
hFE CLASSIFICATION
Marking
M
L
K
hFE
100 to 200
150 to 300
200 to 400
PACKAGE DRAWING (UNIT: mm)
TAPING SPECIFICATION
Electrode Connection
1. Base
2. Collector
3. Emitter
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