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参数资料
| 型号： | 2SA1871-GA2 |
| 元件分类： | 功率晶体管 |
| 英文描述： | 1 A, 600 V, PNP, Si, POWER TRANSISTOR |
| 文件页数： | 5/6页 |
| 文件大小： | 116K |
| 代理商： | 2SA1871-GA2 |
Data Sheet D17082EJ3V0DS
3
2SC4346,4346-Z
TYPICAL CHARACTERISTICS (TA = 25°C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
FORWARD BIAS SAFE OPERATING AREA
P
T
-Tota
lP
ower
Dissipation
-
W
With infinite heatsink
(TC = 25C)
Mounted on print board
(Note) 2SC4346-Z
Mounted on ceramic
subsutrate of 7.5 mm
2
x 0.7 mm
(Note)
0
2
4
6
8
10
12
50
100
150
200
TA - Ambient Temperature - °C
I
C
-
Collector
Cu
rr
ent
-
A
0.01
1
10
100
1000
0.1
1.0
10
PW = 1
μs
IC(DC)
IC(pulse)
Power Dissipation Limited
s/b Limited
TC = 25
C
10
μs
100
μs
1 ms
10 ms
VCE - Collector to Emitter Voltage - V
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
DC CURRENT GAIN vs. COLLECTOR CURRENT
I
C
-
Collector
Cu
rr
ent
-
A
0
1
234
5
0
0.4
0.8
1.2
1.6
2.0
IB = 100 mA
90 mA
80 mA
70 mA
60 mA
50 mA
40 mA
30 mA
20 mA
10 mA
VCE - Collector to Emitter Voltage - V
h
FE
–
DC
Cur
rent
G
ain
0.01
0.001
VCE = 5 V
Pulsed
0.1
1
10
100
IC - Collector Current - A
COLLECTOR AND BASE SATURATION VOLTAGE vs.
COLLCTOR CURRENT
TURN-ON, STORAGE TIME AND FALL TIME vs.
COLLECTOR CURRENT
V
BE
(s
at
)-
B
as
e
Satu
ration
Vol
tage
-
V
CE
(s
at)
-C
oll
ector
Satu
rati
on
Voltag
e-
V
0.01
0.001
0.1
1.0
10
1
10
IC = 5 x IB
Pulsed
VBE(sat)
VCE(sat)
IC - Collector Current - A
t
f-
F
all
Tim
e-
μ
s
t
st
g-
S
tor
ag
e
T
im
e-
μ
s
t
on
-Turn
-on
Time
-μ
s
0.1
1
10
0.1
1
VCC = 200 V
IC : IB1 : IB2 = 10 : 1 :
2
Pulsed
tstg
tf
ton
IC - Collector Current - A
相关PDF资料 |
PDF描述 |
|---|---|
| 2SA1871-GA3 | 1 A, 600 V, PNP, Si, POWER TRANSISTOR |
| 2SA1871-GA3-AZ | 1 A, 600 V, PNP, Si, POWER TRANSISTOR |
| 2SA1871-GA3-AZ | 1 A, 600 V, PNP, Si, POWER TRANSISTOR |
| 2SA1871-GA2-AZ | 1 A, 600 V, PNP, Si, POWER TRANSISTOR |
| 2SA1871-GA1 | 1 A, 600 V, PNP, Si, POWER TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SA1871-GA2(T1-AZ) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SA1871-GA3(T1-AZ) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SA1871-T1-AZ | 制造商:Renesas Electronics Corporation 功能描述:Cut Tape |
| 2SA1873-GR | 功能描述:两极晶体管 - BJT INCORRECT MOUSER P/N RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SA1873-GR(TE85L,F | 功能描述:两极晶体管 - BJT -150mA -50V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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