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参数资料
| 型号： | 2SA1890G-S |
| 厂商： | PANASONIC CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1000 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | ROHS COMPLIANT, MINIP3-F2, 3 PIN |
| 文件页数： | 2/2页 |
| 文件大小： | 207K |
| 代理商： | 2SA1890G-S |
2SA1890G
2
SJD00327AED
This product complies with the RoHS Directive (EU 2002/95/EC).
VBE(sat) IC
hFE IC
fT IE
PC Ta
IC VCE
VCE(sat) IC
Cob VCB
0
160
40
120
80
140
20
100
60
0
1.2
1.0
0.8
0.6
0.4
0.2
Copper plate at the collector
is more than 1 cm2 in area,
1.7 mm in thickness
Collector
power
dissipation
P
C
(W
)
Ambient temperature T
a (°C)
0
10
8
2
6
4
0
1.2
1.0
0.8
0.6
0.4
0.2
Ta
= 25°C
IB
= 8 mA 7 mA
6 mA
5 mA
4 mA
3 mA
2 mA
1 mA
Collector
current
I
C
(A
)
Collector-emitter voltag V
CE (V)
0.01
0.1
1
10
0.001
0.01
0.1
1
10
IC / IB
= 10
Ta
= 75°C
25
°C
25°C
Collector-emitter
saturation
voltage
V
CE(sat)
(V
)
Collector current I
C (A)
0.01
0.1
1
10
0.01
0.1
1
10
100
IC / IB
= 10
Ta
= 25°C
25
°C
75°C
Base-emitter
saturation
voltage
V
BE(sat)
(V
)
Collector current I
C (A)
0.01
0.1
1
10
0
300
250
200
150
100
50
VCE
= 2 V
Ta
= 75°C
25
°C
25°C
Forward
current
transfer
ratio
h
FE
Collector current I
C (A)
1
10
100
0
200
160
120
80
40
VCB
= 10 V
Ta
= 25°C
Transition
frequency
f
T
(MHz
)
Emitter current I
E (mA)
1
10
100
1000
0
60
50
40
30
20
10
IE
= 0
f
= 1 MHz
Ta
= 25°C
Collector-base voltage V
CB (V)
Collector
output
capacitance
(Common
base,
input
open
circuited)
C
ob
(pF)
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