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参数资料
| 型号： | 2SA1893-O |
| 元件分类： | 功率晶体管 |
| 英文描述： | 5 A, 20 V, PNP, Si, POWER TRANSISTOR |
| 封装： | 2-8M1A, 3 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 140K |
| 代理商： | 2SA1893-O |
2SA1893
2004-07-07
1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1893
Strobe Flash Applications
Audio Power Amplifier Applications
hFE(1) = 100 to 320 (VCE = 2 V, IC = 0.5 A)
hFE(2) = 70 (min) (VCE = 2 V, IC = 4 A)
Low saturation voltage: VCE (sat) = 1.0 V (max)
(IC = 4 V, IB = 0.1 A)
High-power dissipation: PC = 1.3 W
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
35
V
Collector-emitter voltage
VCEO
20
V
Emitter-base voltage
VEBO
8
V
DC
IC
5
Collector current
Pulsed
(Note 1)
ICP
8
A
Base current
IB
0.5
A
Collector power dissipation
PC
1.3
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note 1: Conditions: Pulse width = 10 ms (max), duty cycle = 30% (max)
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 35 V, IE = 0
―
100
nA
Emitter cut-off current
IEBO
VEB = 8 V, IC = 0
―
100
nA
Collector-emitter breakdown voltage
V (BR) CEO
IC = 10 mA, IB = 0
20
―
V
hFE (1)
(Note 2)
VCE = 2 V, IC = 0.5 A
100
―
320
DC current gain
hFE (2)
VCE = 2 V, IC = 4 A
70
―
Collector-emitter saturation voltage
VCE (sat)
IC = 4 A, IB = 0.1 A
―
1.0
V
Base-emitter voltage
VBE
VCE = 2 V, IC = 4 A
―
1.5
V
Transition frequency
fT
VCE = 2 V, IC = 0.5 A
―
170
―
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
―
62
―
pF
Note 2: hFE (1) classification O: 100 to 200, Y: 160 to 320
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-8M1A
Weight: 0.55 g (typ.)
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